The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO 3 and SrTiO 3 , provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm 2 V -1 s -1 (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO 3 and a spinel g-Al 2 O 3 epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite twodimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normalmetal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.PACS numbers: 75.50. Pp, 85.75.Mm Devices relying on spin manipulation are hoped to provide low-dissipative alternatives for microelectronics. Furthermore, spintronics is expected to lead to full integration of information processing and storage functionalities opening attractive prospects for the realization of instant on-and-off computers. A primary goal of current spintronics research is to realize a device with metal spin-valve like behavior [1] in an all semiconductor-based structure enhancing integration of spintronics with existing microelectronics technologies. An oft proposed scheme for such a device consists of a tunnel barrier between two ferromagnetic semiconductors. As such, (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As structures have previously been studied [2,3] with some promising results. However, realizing the full potential of these systems will require a complete understanding of the physics of tunneling into (Ga,Mn)As, which we have found to be rather different than previously thought.In this spirit, we investigate transport in a structure consisting of a single ferromagnetic (Ga,Mn)As layer fitted with a tunnel barrier and a non-magnetic metal contact. We report some of the rich experimental properties of such a tunneling structure and provide an interpretation of the measured spin-valve like effect as a tunneling anisotropic magnetoresistance (TAMR) due to a two-step magnetization reversal and a magnetization dependent density of states (DOS) in the (Ga,Mn)As layer.The magnetic layer in our sample is a 70 nm thick epitaxial (Ga,Mn)As film grown by low temperature (270• C) molecular beam epitaxy onto a GaAs (001) substrate [4]. High-resolution x-ray diffraction showed that the sample had high crystalline quality comparable to that of the substrate. From the measured lattice constant and the calibration curves of Ref.[5], the Mn concentration in the ferromagnetic layer is roughly 6%. Etch capacitance-voltage control measurements yielded a hole density estimate of ∼ 10 21 cm −3 and the Curie temperature of 70 K was determined from SQUID measurements.After growth, the sample surface was Ar sputtered to remove any potential oxides, and a 1.4 nm Al layer was deposited at a rate of 0.

Staircaselike hysteresis loops of the magnetization of a LiY0.998Ho0.002F4 single crystal are observed at subkelvin temperatures and low field sweep rates. This behavior results from quantum dynamics at avoided level crossings of the energy spectrum of single Ho3+ ions in the presence of hyperfine interactions. Enhanced quantum relaxation in constant transverse fields allows the study of the relative magnitude of tunnel splittings. At faster sweep rates, nonequilibrated spin-phonon and spin-spin transitions, mediated by weak dipolar interactions, lead to magnetization oscillations and additional steps.

Quantum coherent transport of surface states in a mesoscopic nanowire of the three-dimensional topological insulator Bi(2}Se(3) is studied in the weak-disorder limit. At very low temperatures, many harmonics are evidenced in the Fourier transform of Aharonov-Bohm oscillations, revealing the long phase coherence length of spin-chiral Dirac fermions. Remarkably, from their exponential temperature dependence, we infer an unusual 1/T power law for the phase coherence length L(φ)(T). This decoherence is typical for quasiballistic fermions weakly coupled to their environment.

We report the discovery of a very large tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The key novel spintronics features of this effect are as follows: (i) both normal and inverted spin-valve-like signals; (ii) a large nonhysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis; (iv) enormous amplification of the effect at low bias and temperatures.

Longitudinal or transverse magnetic fields applied on a crystal of Mn12 acetate allows one to observe independent tunnel transitions between m = -S+p and m = S-n-p ( n = 6-10, p = 0-2 in longitudinal field and n = p = 0 in transverse field). We observe a smooth transition (in longitudinal) from coherent ground-state to thermally activated tunneling. Furthermore, two ground-state relaxation regimes show a crossover between quantum spin relaxation far from equilibrium and near equilibrium, when the environment destroys multimolecule correlations. Finally, we stress that the complete Hamiltonian of Mn12 should contain odd spin operators of low order.

Multi-spins tunneling cross-relaxations in an ensemble of weakly-coupled Ho 3+ ions, mediated by weak anisotropic dipolar interactions, can be evidenced by ac-susceptibility measurements in a high temperature regime. Based on a four-body representation, including the rare-earth nuclear spin, two-ions tunneling mechanisms can be attributed to both dipolar-biased tunneling and co-tunneling processes. The co-reversal involving entangled pairs of magnetic moments is discussed with a particular emphasis, giving new evidences to elucidate the many-body quantum dynamics.

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