The time to failure due to dc-current passage in pure indium and pure tin films is studied. Two regions of failure behaviour can clearly be distinguished. I n one region failure starts with melting followed by coagulation. I n the other the time to failure is mainly determined by electromigration. The corresponding activation energies for electromigration in I n and Sn appear t o be quite different. This is discussed in terms of different behaviours of the effective charge.Die Ausfallzeit infolge von Gleichstromdurchgang in reinen Indium-und reinen Zinnschichten wird untersucht. Zwei Bereiche von Fehlerverhalten lassen sich klar unterscheiden. I m ersten Bereich beginnt der Fehler mit Schmelzen gefolgt von Koagulation. I n dem anderen ist die Ausfallzeit hauptsachlich durch Elektromigration bestimmt. Die entsprechenden Aktivierungsenergien fur Elektromigration in I n und Sn scheinen vollig unterschiedlich zu sein. Dies wird mit dem unterschiedlichen Verhalten der effektiven Ladung diskutiert.
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