Hexaphenylcarbodiphosphorane when treated with manganese pentacarbonyl bromide or rhenium pentacarbonyl bromide gives M(Br)(CO)4(Ce=CPP1i3), M = Mn or Re, and triphenylphosphine oxide. This is the first reported instance of a Wittig type reaction on a metal-coordinated carbonyl group. X-Ray diffraction studies show that an acetylide ligand is formed instead of the expected olefin. In contrast to this behavior, normal Wittig reagents give ylide carbene adducts with metal carbonyls of chromium, tungsten, and iron. These do not the y(C=C), (C6H5)3P+C=C: ~, moiety in the complex.
Publication costs of this article were assisted by American Cyanamid Company. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-04-05 to IP Large-scale integration (LSI) has forced silicon insulated-gate field effec~ transistor (IGFET) technology Key words: electron trapping, phosphosilicate glass, insulator, film, CVD, to provide smaller geometry devices, with a concomitant reduction in gate insulator thickness. Future devices may well employ the equivalent of only 250A of SiO2. Meanwhile, contamination is still a problem and ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2015-04-05 to IP
The effect of oxygen plasma stripping environments on the electrical properties of thin oxides has been studied. A barrel, parallel plate and downstream stripper are compared. Damage, measured by shifts in flatband voltage (Δ Vfb), increases in the density of interface traps (Dit), and degradation in minority carrier lifetimes, was observed in all plasma processed samples. Plasma treated wafers had 10–100 fold increases in Dit but recovered to nearly control levels after a 450 °C anneal. ΔVfb and lifetimes did not recover in all cases. Mobile ion contamination dominated in the high temperature (≥ 250 °C) downstream stripping tool. The mobile ion concentration was halved by decreasing the process temperature in the downstream etcher. Ion bombardment-induced damage appears to be most important in the parallel plate configuration. Lifetime results were poor for wafers etched in an unshielded barrel reactor and did not recover after anneal. Use of an etch tunnel improved results to control levels. Degradation of minority carrier lifetimes measured using the photoconductivity technique correlated well with changes in Vfb and Dit. This measurement provides a simple method for evaluating plasma-induced damage.
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