The scanning tunneling microscope has been used to desorb hydrogen from hydrogen-terminated silicon (100) surfaces. As a result of control of the dose of incident electrons, a countable number of desorption sites can be created and the yield and cross section are thereby obtained. Two distinct desorption mechanisms are observed: (i) direct electronic excitation of the Si-H bond by field-emitted electrons and (ii) an atomic resolution mechanism that involves multiple-vibrational excitation by tunneling electrons at low applied voltages. This vibrational heating effect offers significant potential for controlling surface reactions involving adsorbed individual atoms and molecules.

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We have used two-photon laser-induced fluorescence to obtain quantitative measurements of the concentration of ground state O atoms in O2+CF4 rf discharges. Absolute calibration was achieved by generating a known concentration of atomic oxygen by UV laser photolysis of O2. Trace amounts of Ar were added to serve as an inert reference gas for concurrent optical emission measurements, in which the plasma-induced optical emission intensities from O* and Ar* lines were recorded. Emission line shapes were measured using a Fabry–Perot interfermoter to gain information on the mechanisms for formation of excited oxygen atoms in the plasma. Two excitation mechanisms were found to be important: (1) electron impact excitation of ground state atoms, e+O → O*+e, and (2) dissociative excitation of O2, e+O2 → O*+O+e. Evidence for both excitation mechanisms was obtained for O* (8446 Å) emission, with atomic excitation being dominant, whereas dissociative excitation appeared to be the dominant mechanism for O* (7774 Å) emission. Argon actinometry for the determination of ground state oxygen was directly tested. Because of the contribution from dissociative excitation, a strict proportionality, O*/Ar*∝[O]/[Ar], was not satisfied where O* (Ar*) is the intensity of an atomic oxygen (argon) emission line, and [O] ([Ar]) is the oxygen (argon) atom concentration. However, within certain limitations, the O* (8446 Å)/Ar* emission intensity ratio gives the right qualitative trends for the O atom concentration.

Carbon nanotubes are novel materials with unique electrical and mechanical properties. Here we present results on their atomic structure and mechanical properties in the adsorbed state, on ways to manipulate individual nanotubes, on their electrical properties and, finally, on the fabrication and characteristics of nanotube-based electron devices. Specifically, Ž . atomic force microscopy AFM and molecular mechanics simulations are used to investigate the effects of van der Waals interactions on the atomic structure of adsorbed nanotubes. Both radial and axial structural deformations are identified and the interaction energy itself is obtained from the observed deformations. The conditions under which the structure of a nanotube will adjust to the topography of the substrate are defined. We show that the strong substrate-nanotube interaction allows the manipulation of both the position and shape of individual nanotubes at inert surfaces using the AFM. AFM manipulation is then utilized to position individual nanotubes on electrical pads so that their electrical characteristics can be evaluated. We demonstrate the operation of a field-effect transistor based on a single semiconducting nanotube and of a single-electron transistor using a nanotube bundle as Coulomb island. Finally, conducting nanotubes are employed as tips for AFM lithography. q

The scanning tunneling microscope (STM) can be used to select a particular adsorbed molecule, probe its electronic structure, dissociate the molecule by using electrons from the STM tip, and then examine the dissociation products. These capabilities are demonstrated for decaborane(14) (B(10)H(14)) molecules adsorbed on a silicon(111)-(7 x 7) surface. In addition to basic studies, such selective dissociation processes can be used in a variety of applications to control surface chemistry on the molecular scale.