We have examined band-edge fluorescent emission spectra in various II-VI compounds at 4°K with the objective of establishing correlations between the presence of specific spectra and the presence of specific defects. The basis for such correlations is the proven existence of radiative recombination from excitons bound to defects, 1 " 3 and the expectation that such mechanisms can account for much of the plethora of band-edge spectra observed. We have found evidence for a simple relationship governing such correlations for this family of compounds-a significant extension of Haynes's observations 1 in silicon. Figure 1 (insert) illustrates the procedure employed for acceptor defects. We have attempted, by purification and subsequent introduction of acceptor defects, to obtain samples which exhibit a dominant emission process of near-band-gap energy at 4°K correlated with the presence of a dominant emission process 0.200 0,050 0010 0005 0002,
The diffusion of Cu into doped and undoped ZnSe and ZnS has been studied by radiotracer techniques, accompanied by luminescence and electrical measurements. Both luminescence and radiotracer measurements have shown that the diffusion coefficient of Cu in undoped and Cl-doped ZnSe in the temperature range of 300-570°C obeys the relationship D=1.7X10~5exp(-0.56eV/&r). A strong retarding influence on the diffusion of Cu by the presence of Al in the crystals has been interpreted in terms of ion pairing between Al and the in-diffusing Cu. The same effect has also been observed in ZnS. The diffusion of Al into ZnSe has been found to be accompanied by a codiffusion of Zn vacancies. The luminescence patterns, the electrical characteristics and the radiotracer data in partially diffused crystals have been used to correlate the electrical and optical activity of the in-diffused defect centers.
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