Monolithic n-channel infrared charge-coupled devices (IRCCDs) have been f a b r i c a t e d i n Hgl-xCdxTe (~~0 . 3 ) . The f i r s t r e p o r t e d i n f r a r e d d e t e c t l o n and charge readout with such structures have been demonstrated. The CCD r e g i s t e r s a r e four-phase, surface channel, overlapping gate s t r u c t u r e s i n c o r p o r a t i n g MOS photodetectors which t r a n s f e r l a t e r a l l y i n t o t h e CCD s h i f t r e g i s t e r . The c h a r g e t r a n s f e r e f f i c i e n c y (CTE) from a 2-element 3-1/2-bit IRCCD has been measured by elect r i c a l i n j e c t i o n of s i g n a l u s i n g a f a t z e r o i n p u t with CTE >0.992 being realized. The 2-element a r r a y and 20-element a r r a y s w i t h 20 b i t s have been operated i n a n o p t i c a l d e t e c t o r m u l t i p l e x i n g mode. Charge i n t e g r a t i o n , t r a n s f e r from the MOS d e t e c t o r s i n t o t h e CCD r e g i s t e r and s e r i a l r e a d o u t have been demonstrated. E a r l i e r work on monolithic CCD a r r a y s i n InSb has been repQxted.l With the continued maturation of m a t e r i a l growth technology, surface preparation techniques, etc., of HgCdTe, i t became d e s i r a b l e
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