The analysis of photoconductive frequency-resolved spectroscopy is developed for variable temperature measurements. It is shown that when the excess carrier kinetics is dominated by carrier trapping the technique can be used to obtain the major trap parameters. This analysis is applied as an example to polycrystalline silicon on insulator on silicon films and a dominant trap with an activation energy of 70 meV is identified.
A system for the diffusion of dopants into semiconductors is described. The equipment enables unusual diffusion profiles to be produced by facilitating the superposition of radiant energy from an incoherent lamp rapid thermal annealing system and a high-power laser. Using this equipment local modifications to doping patterns are possible, thus enabling research into novel device structures.
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