After a comparison of the β‐, ϵ‐, γ‐, and δ‐type GaSe crystal structures, the different interlayer interactions are discussed. New values for the intralayer interatomic distances Se–Ga = 2.463 (15) Å, Ga–Ga = 2.457 (18) Å, and the interlayer distance Se–Se = 3.880 (15) Å are proposed. These are mean values for the δ‐type determined with a higher accuracy than the previous ones, relevant to the ϵ‐ and γ‐type structure. The influence of the growth method on crystal type and dislocation density are discussed.
GaS p, hexagonal, space group P63/mmc, a = 3.587 (3), c = 15"492 (7) A, Z= 4. The mean atomic distances in the layers are: Ga-Ga=2"447 (9), Ga-S=2-334 (4) and S-S=4-599 (18) A. The mean atomic distances between the layers are" S-S=3"768 (11) and A. The interlayer S-S distance is more than twice the van der Waals radius.
GaSe 3, hexagonal, space group P63mc, a=3.755 (3), c=31.990 (10) A, Z=8. The mean atomic distances in the layers are: Ga-Ga= 2.457 (10), Ga-Se= 2.463 (10) and Se-Se= 4.784 (15) A. The mean atomic distances between the layers are: Se-Se= 3"880 (15), Ga-Se=4.392 (16) A. The interlayer Se-Se distance is less than twice the van der Waals radius.
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