Data are presented demonstrating the laser operation (quasicontinuous, ∼200K) of an InGaP–GaAs–InGaAs heterojunction bipolar light-emitting transistor with AlGaAs confining layers and an InGaAs recombination quantum well incorporated in the p-type base region. Besides the usual spectral narrowing and mode development occurring at laser threshold, the transistor current gain β=ΔIc∕ΔIb in common emitter operation decreases sharply at laser threshold (6.5→2.5,β>1).
Continuous wave laser operation at 25°C, with simultaneous electrical gain, of an InGaP–GaAs heterojunction bipolar transistor laser, with AlGaAs optical confining layers and an InGaAs recombination quantum well incorporated into the p-type base region, is demonstrated. At laser threshold (IB=40mA, VCB=0, 25°C), the transistor current gain β=ΔIC∕ΔIB in common-emitter operation changes abruptly (2.3→1.2,β>1), with laser modes developing at wavelength λ∼1006nm. Direct three-port modulation of the transistor laser at 3GHz is demonstrated for a device with a 2.2μm emitter width and a 850μm length between cleaved Fabry–Perot facets (which is the performance of an exploratory device and not near the limits).
Smart glass is such that its properties may he changed by application of a potential across it. The change in properties may be engineered to alter the amount of heat energy that can penetrate the glass which provides heating and cooling design options. Therein lies its potential in energy savings. Smart glass may be classified into three types: electrochromic, suspended particle, and polymer dispersed liquid crystal (PDLC). Each of these types has their own mechanisms, advantages, and disadvantages. Electrochromic smart glass is the most popular, currently it utilizes an electrochromic film with an ion storage layer and ion conductor placed between two transparent plates. The electrochromic film is usually made of tungsten oxide, owing to the electrochromic nature of transition metals. An electric potential initiates a redox reaction of the electrochromic film transitioning the color and the transparency of the smart glass. Suspended particle smart glass has needle shaped particles suspended within an organic gel placed between two electrodes. In its off state, the particles are randomly dispersed and have a low light transmittance. Once a voltage is applied, the needle particles will orient themselves to allow for light to pass through. PDLC smart glass works similarly to the suspended particle variety. However, in PDLC smart glass, the central layer is a liquid crystal placed within a polymer matrix between electrodes. Similar in behavior to the suspended particles, in the off position the liquid crystals are randomly dispersed and have low transmittance. With the application of a voltage, the liquid crystals orient themselves, thereby allowing for the transmittance of light. These different smart glasses have many different applications, but with one hindrance. The requirement of a voltage source is a major disadvantage which greatly complicates the overall installation and manufacturing processes. However, the integration of photovoltaic (PV) devices into smart glass technology has provided one solution. Photovoltaic films attached in the smart glass will provide the necessary voltage source. The photovoltaic film may even be designed to produce more voltage than needed. The use a photovoltaic smart glass system provides significant cost savings in regards to heating, cooling, lighting, and overall energy bills. Smart glass represents a technology with a great deal of potential to reduce energy demand. Action steps have been identified to propagate the popular use of smart glass.
A quantum well (160Å) transistor laser with a 400μm cavity length that achieves the large 3dB modulation bandwidth of 13.5GHz is described. The fast base recombination (transport determined, τBL<10ps) permits improvement of the carrier-photon damping ratio (>1∕2), resulting in a resonant peak magnitude of unity and consequently a resonance frequency of ∼0GHz (no peak) in the small-signal response. Quantum well band filling and bandwidth saturation are observed on the ground state (λ=1000nm), and increase with operation on the first excited state (λ=980nm).
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