In conventional semiconductor processes, gross photoresist scum has been detected with inspections using optical microscope or secondary electron microscope; trace molecular contamination or photoresist residue could be removed during wafer processes employing vigorous thermal, chemical, plasma or ion beam steps and thus had negligible effects on semiconductor manufacture. However, advanced semiconductor technology has become increasingly sensitive to molecular contamination that might be difficult to detect with traditional inspection and analysis techniques. Direct surface analysis by TOFSIMS provides sensitive detection of both elemental and molecular contamination that may be originated from environmental sources or from wafer fabrication processes. Monolayer level molecular contamination and very thin photoresist scum that were not detectable with conventional inspection techniques have been characterized with TOFSIMS in this paper. Detrimental effects of the very thin photoresist scum have been demonstrated with a 130 nm technology process. Cleaning process to remove molecular contamination was validated with TOFSIMS analysis. Detection of very thin photoresist scum can be accomplished with TOFSIMS imaging analysis.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
customersupport@researchsolutions.com
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.