We have investigated the nature of silicon on iron interface in electron beam deposited Fe∕Si bilayers, with various iron and silicon thicknesses. The Fe and Si layer thicknesses are varied from 30to330Å and 20to86Å, respectively. Grazing incidence x-ray reflectivity and photoelectron spectroscopy measurements were carried out on these samples to determine interface characteristics. Si on Fe (Si̱Fe) interlayer thickness, roughness, and composition do not depend on the thickness of Fe and Si. The thickness of the interlayer is around 13Å. A systematic variation in silicide concentration across this interface is observed by x-ray photoelectron spectroscopy measurement. Change in the density of states in valence band across this interface is also observed by ultraviolet photoelectron measurement.
We report the detection of ammonia gas through electronic and transport properties analysis of boron nitride sheet. The density functional theory (DFT) based ab initio approach has been used to calculate the electronic and transport properties of BN sheet in presence of ammonia gas. Analysis confirms that the band gap of the sheet increases due to presence of ammonia. Out of different positions, the bridge site is the most favorable position for adsorption of ammonia and the mechanism of interaction falls between weak electrostatic interaction and chemisorption. On relaxation, change in the bond angles of the ammonia molecule in various configurations has been reported with the distance between NH3 and the sheet. An increase in the transmission of electrons has been observed on increasing the bias voltage and I-V relationship. This confirms that, the current increases on applying the bias when ammonia is introduced while a very small current flows for pure BN sheet.
In the present paper, we have investigated structural, optical as well as electronic properties of electron beam evaporated Ge thin films having layer thicknesses ranging from ultra-thin (5 nm) to thick (200 nm). The Raman spectra show that all peaks are shifted towards lower wave number as compared to their bulk counterparts and are considered as a signature of nanostructure formation and quantum confinement effect. The Raman line exhibits transformation from nanocrystalline to microcrystalline phase with a reduction in blue shift of peak position with increase in Ge film thickness (>5 nm). Similarly, the optical absorption spectra corresponding to these films also show reduction in blue shift effect, although Ge 5 nm film shows the absorption behaviour quite different from higher thickness films. The corresponding band gap values obtained from absorption measurements are much larger than bulk Ge and are mainly attributed to the effect of quantum confinement as expected for small size particles calculated from GIXRD patterns. AFM data in each case are correlated and discussed with structural as well as optical results to support the effect of growth morphology on the above-mentioned observations. The results are further supported by photoelectron spectroscopy (PES), photoluminescence (PL) and resistivity measurements and are interpreted in terms of crystallinity and quantum confinement effect.
Structural, magnetic and electronic properties of electron beam evaporated ultrathin Fe/Al
structures are studied as a function of annealing temperature. The structural studies
show that adjacent Fe and Al layers are partially intermixed during deposition,
forming FeAl transition layers a few nanometres thick at the interfaces. However, at
200 °C, a large degree of atomic mixing causes a progressive loss of periodicity due to the formation
of disordered intermetallic FeAl phase at the interfaces, which on further annealing at
400 °C transforms
to Fe3Al
intermetallic phase. The magnetic and resistivity measurements
show maximum coercivity, saturation field and resistivity values at
200 °C
which then decrease above annealing temperatures. The corresponding valence band
photoemission results show significant modifications in the Fe-3d as well as Al-3s density of
states due to strong hybridization of sp–d states at the Fermi level. The observed
magnetic and resistivity behaviour in each case is discussed and correlated with
microstructural and electronic property changes due to the annealing treatment.
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