R. Ben‐Michael scite author profile

Single-Photon Avalanche Diodes (SPAD) for 1550 nm wavelength can have InGaAs/InP structure similar to that of Avalanche PhotoDiodes of fiber optic systems, but for optimizing the device structure radically different criteria must be adopted. Such criteria are here discussed and a complete experimental characterization of the fabricated device is reported. Remarkable performance is verified also at moderately low temperature, as achieved with Peltier coolers.

show abstract

A 1.3-μm wavelength laser with an integrated output power monitor using a directional coupler optical power tap

Koren¹,

Miller²,

Young³

et al. 1996

IEEE Photon. Technol. Lett.

View full text Add to dashboard Cite

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

hi@scite.ai

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

R. Ben‐Michael

Single photon avalanche diodes (SPADs) for 1.5 μm photon counting applications

InGaAsP–InP Avalanche Photodiodes for Single Photon Detection

Advanced components and sub-system solutions for 40 Gb/s transmission

InGaAs/InP Single Photon Avalanche Diode Design and Characterization

A 1.3-μm wavelength laser with an integrated output power monitor using a directional coupler optical power tap

Contact Info

Product

Resources

About