In this paper, we have studied the temperature and frequency dependence behavior of ac conductivity in the glassy system Se 80−x Te 20 Sn x (0 x 10). All the measurements have been carried out in the frequency range 1-500 kHz and in the temperature range from room temperature to the glass transition temperature T g . The density of defect states has been determined using the correlated barrier-hopping model for all these glassy alloys. The appearance of local extrema in the density of defect states is explained in terms of the change from one-dimensional (1D) to 2D structure (from 'bundles' to 'layers') and from 2D to 3D structure (from 'layers' to 'clusters').
Photoionization of the I + ion in the energy range of the 4d giant resonance has been studied using our recently developed open-shell random phase approximation with exchange (RPAE) method. Photoionization cross sections for the I + 4d-f, p, 5s-p, 5p-s, d have been obtained for each term of the ground configuration. Calculations include all the intra-shell and inter-shell coupling among the 4d, 5s and 5p subshells. Our maximum cross section in the energy region of the I + 4d giant resonance, 23.6 Mb at 90.9 eV, is in excellent agreement with the recent measurement, 23(3) at 90 eV.
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