A process for high aspect ratio reactive ion etching of molecular beam epitaxially (MBE) grown GaAs and AlGaAs materials using a mixture of methane and hydrogen is described. The process utilises a positive photoresist which can withstand 7 pm mesa etching of GaAs/Alo,3Gao.,As and is simple to remove in acetone or oxygen plasmas. This eliminates the need for plasmaenhanced chemical vapour deposition (PECVD) mask technology.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.