Dielectric properties of fresh leaves samples from different plant species were studied over the frequency range to lo4 Hz. The dynamic behavior of the conductance and capacitance in leave samples has been observed to follow fractional power law. The observed power-law dispersions have been modeled using frequencydependent resistive and capacitive elements of a conventional equivalent circuit.

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Frequency dependence of the complex susceptibility for a Bridgman-Stockbarger (B-S) grown p-GaSe single crystal parallel to c-axis (//c) and perpendicular to c-axis (⊥c) over seven decades (10-3-104 Hz), together with temperatures ranging from 300-450 K, has provided experimental data relating to the dynamic response of slow transition. The crystal has exhibited low-frequency dispersion (LFD) for //c and ⊥c, with a buried loss peak due to an unknown process, and no single mechanism appears to be responsible for this. The LFD activation energies for hopping charge carriers for //c and ⊥c are found to be 0.66±0.02 eV and 0.79±0.02 eV, respectively. Only slight anisotropy in the dielectric response is observed in the measured temperature range.

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