The spatial distribution of photogenerated
carriers in atomically
thin MoS2 flakes is investigated by measuring surface potential
changes under light illumination using Kelvin probe force microscopy
(KPFM). It is demonstrated that the vertical redistribution of photogenerated
carriers, which is responsible for photocurrent generation in MoS2 photodetectors, can be imaged as surface potential changes
with KPFM. The polarity of surface potential changes points to the
trapping of photogenerated holes at the interface between MoS2 and the substrate as a major mechanism for the photoresponse
in monolayer MoS2. The temporal response of the surface
potential changes is compatible with the time constant of MoS2 photodetectors. The spatial inhomogeneity in the surface
potential changes at the low light intensity that is related to the
defect distribution in MoS2 is also investigated.
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