Thin TiO2 films are demonstrated to be an excellent electron-selective contact for crystalline silicon solar cells. An efficiency of 21.6% is achieved for crystalline silicon solar cells featuring a full-area TiO2 -based electron-selective contact.
Yang and co-workers reported a dual-function, low-cost, high-performance titanium-nitride-based passivating contact for silicon solar cells. By the implementation of electron-conductive titanium nitride contact, which acts simultaneously as a surface passivating layer and metal electrode, a silicon solar cell with an efficiency of 20% is achieved using a simplified fabrication process. This work also expands the pool of available electron transport materials, from metal oxides to metal nitrides, for photovoltaic devices.
High carrier recombination loss at the contact regions has become the dominant factor limiting the power conversion efficiency (PCE) of crystalline silicon (c‐Si) solar cells. Dopant‐free carrier‐selective contacts are being intensively developed to overcome this challenge. In this work, vanadium oxide (VOx) deposited by atomic layer deposition (ALD) is investigated and optimized as a potential hole‐selective contact for c‐Si solar cells. ALD VOx films are demonstrated to simultaneously offer a good surface passivation and an acceptable contact resistivity (ρc) on c‐Si, achieving a best contact recombination current density (J0) of ≈40 fA cm−2 and a minimum ρc of ≈95 mΩ.cm2. Combined with a high work function of 6.0 eV, ALD VOx films are proven to be an effective hole‐selective contact on c‐Si. By the implementation of hole‐selective VOx contact, the state‐of‐the‐art PCE of 21.6% on n‐type c‐Si solar cells with a high stability is demonstarted. These results demonstrate the high potential of ALD VOx as a stable hole‐transport layer for photovoltaic devices, with applications beyond c‐Si, such as perovskite and organic solar cells.
High quality carrier-selective contacts with suitable electronic properties are a prerequisite for high power conversion efficiency (PCE) photovoltaic devices. In this work, an efficient electron-selective contact, titanium oxynitride (TiOxNy), is developed for crystalline silicon (c-Si) and organic photovoltaic devices. Atomic-layer deposited TiOxNy is demonstrated to be highly conductive with a proper work function (4.3 eV) and a wide band gap (3.4 eV). Thin Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))
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