CoFe 2 O 4 (CFO) thin films were prepared on the Si (100) substrates by a sol-gel method.Their microstructure and magnetic properties were analyzed and measured by XRD, AFM and VSM. The experiment results show that the films have a single phase of the spinel structure when the annealing temperature is above 450 • C. The crystallization degree and the Ms of the CFO thin films increase slowly with the increase of the annealing temperature. The grain size achieves the single-domain critical size at about 650 • C, which cause Hc starts to drop with the rise of annealing temperature. The CFO thin films prepared by crystalline multi-layered coating method have bigger grain size, worse compactness and bigger Ms than those prepared by non-crystalline multi-layered coating method.
Guo (2020) Characterization of the complete chloroplast genome sequence of Tinospora sagittata and its phylogenetic implications, Mitochondrial DNA Part B, 5:1, 176-177, ABSTRACT Tinospora sagittata is a perennial vine of the family Menispermaceae and distributed in Hunan, Hubei, Guangxi, and Sichuan province of P. R. China. It has been used in Chinese traditional medicine for centuries. The chloroplast (cp) genome of T. sagittata, characterized using Illumina technology, is 163,662 bp in size. There are a total of 130 genes, coding for 85 proteins, 37 tRNAs, and 8 rRNAs. Phylogenetic relationship analysis based on 16 complete cp genome sequences exhibited that T. sagittata was phylogenetically closer to Menispermum dauricum and Stephania japonica.
ARTICLE HISTORY
Highly C-axis oriented ZnO thin film was manufactured by radio-frequency magnetron sputtering technique on Si (111) substrate. The main objective was to study the influence of rapid thermal annealing (RTA) temperature on the structure and interfacial characteristic of ZnO thin films. X-ray diffraction results showed that the ZnO thin films annealed at 600 C by RTA technique had a perfect C-axis preferred orientation compared to the other ZnO thin films, and the full width at half maximum of ZnO (002) rocking curve measurements indicted that the RTA-annealed ZnO thin films possessed better crystal structure. Atom force microscopy displayed that the grain size of RTA-annealed ZnO thin films was fine and uniform compared with the as-deposited ZnO thin films, although the grains grew in RTA process and the root meant square roughness was smaller than that of as-deposited films. High-resolution transmission electron microscopy showed that there was an obvious amorphous layer between ZnO thin films and Si substrate, but the RTA-annealed ZnO thin films exhibited larger and denser columnar structure and a preferred orientation with highly c axis perpendicular to the amorphous layer.
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