Three-dimensional periodic microstructures of aluminum oxide, which are important for creating photonic band-gap structures (PBGs), were fabricated by laser rapid prototyping by means of laser-induced direct-write deposition from the gas phase. The structures consisted of layers of parallel rods forming a face-centered tetragonal lattice with lattice constants of 66 and 133 micrometers. These structures showed transmission minima centered around 4 terahertz (75 micrometers) and 2 terahertz (150 micrometers), respectively. PBGs will allow precise control of the optical properties of materials, including lasers without threshold.
Work materials experience large strains, high strain rates, high temperatures, and complex loading histories in machining. The problem of how to accurately model dynamic material behavior, including the adiabatic effect is essential to understand a hard machining process. Several conventional constitutive models have often been used to approximate flow stress in machining analysis and simulations. The empirical or semiempirical conventional models lack mechanisms for incorporating isotropic/kinematic hardening, recovery, and loading history effects. In this study, the material constants of AISI 52100 steel (62 HRc) were determined for both the Internal State Variable (ISV) plasticity model and the conventional Johnson-Cook (JC) model. The material constants were obtained by fitting the ISV and JC models using nonlinear least square methods to same baseline test data at different strains, strain rates, and temperatures. Both models are capable of modeling strain hardening and thermal softening phenomena. However, the ISV model can also accommodate the adiabatic and recovery effects, while the JC model is isothermal. Based on the method of design of experiment, FEA simulations and corresponding cutting tests were performed using the cutting tool with a 20 deg chamfer angle. The predicted chip morphology using the ISV model is consistent with the measured chips, while the JC model is not. The predicted temperatures can be qualitatively verified by the subsurface microstructure. In addition, the ISV model gave larger subsurface von Mises stress, plastic strain, and temperature compared with those by the JC model.
Time-resolved reflectivity (TRR) measurements have been used to determine the growth kinetics of both the amorphous-to-␥-phase and the ␥-to-␣ phase transformations of alumina films that have been deposited on (0001), (1210), and (0112) sapphire substrates. The activation energies for the amorphous-to-␥-phase and ␥-to-␣ transformations respectively are 4.5 and 5.2 eV, irrespective of the crystallographic orientation of the underlying sapphire substrate. For both transformations, the relative transformation rates seem to reflect the symmetry of the sapphire substrates, with the fastest kinetics being on the lowest symmetry orientation and slowest kinetics being on the highest symmetry orientation. These relative rates are attributed to the differences in step mobility on the different substrate orientations.
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