Growth mechanisms of ZnO(0001) investigated using the first-principles calculation J. Appl. Phys. 112, 064301 (2012) Generation of silver-anatase nanocomposite by excimer laser-assisted processing AIP Advances 2, 032171 (2012) Degradation and passivation of CuInSe2

High resolution electron energy loss spectroscopy (HREELS) is a powerful technique to probe vibrational and electronic excitations at surfaces. The dispersion relation of surface excitations, i.e., energy as a function of momentum, has in the past, been obtained by measuring the energy loss at a fixed angle (momentum) and then rotating sample, monochromator, or analyzer. Here, we introduce a new strategy for HREELS, utilizing a specially designed lens system with a double-cylindrical Ibach-type monochromator combined with a commercial VG Scienta hemispherical electron energy analyzer, which can simultaneously measure the energy and momentum of the scattered electrons. The new system possesses high angular resolution (<0.1°), detecting efficiency and sampling density. The capabilities of this system are demonstrated using Bi2Sr2CaCu2O(8+δ). The time required to obtain a complete dispersion spectrum is at least one order of magnitude shorter than conventional spectrometers, with improved momentum resolution and no loss in energy resolution.

New-type protecting ligands beyond the conventional ones are beginning to be introduced in stabilizing new silver NCs.

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN (0001) surfaces and Pt, Au, and Ag J. Appl. Phys. 94, 3939 (2003); 10.1063/1.1598630Preparation and characterization of atomically clean, stoichiometric surfaces of n-and p-type GaN (0001) Growth, interfacial reaction, and Fermi level movement of Gd on n-type GaN(0001)-(1ϫ1) surface are studied using x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy-electron diffraction. Gd grows in a layer-by-layer-like mode and reacts with the substrate at the interface, leading to formation of metallic Ga at room temperature. A downward Fermi level movement is observed, and the resultant Schottky barrier height is 1.5 eV. Annealing promotes further diffusion and an interfacial Gd-Ga exchange reaction, reducing the Schottky barrier height.