Although afforestation of nitrogen‐fixing shrubs, especially Caragana korshinskii in semiarid areas, is expected to improve ecosystem restoration and carbon sequestration, water shortage induced by these thirsty shrubs may negate potential benefits. Yet there is poor understating of the persistence of soil carbon sequestration in nitrogen‐fixing shrub plantations. Here, we selected three C. korshinskii plantations with different ages (10, 20, and 30 years) on the Loess Plateau to evaluate the persistence of soil carbon sink. We examined dynamics of soil carbon, total nitrogen, and soil water, as well as their relationships along the plantation ages. The results showed that soil organic carbon (SOC) and soil total nitrogen (STN) were tightly coupled. SOC, STN, and soil water stocks (0–100 cm) were significantly decreased by 23.9%, 19.9%, and 29.2% from 10 to 30 years, respectively. The reduction of SOC and STN was likely caused by lowered intercanopy herbaceous productivity due to soil drying and intensified competition from shrubs. We present evidence that the positive carbon sequestration by afforestation of leguminous shrub in short term may be further weakened by water shortage, making our ability to restore degraded land in semiarid regions more challenging than previously thought. Therefore, it is essential to improve management of afforestation land such as thinning for maintaining SOC sequestration persistently in water‐limited areas.
As interconnects continue to scale, enabling faster device speed and lower power consumption by reducing the κ value (capacitance) of each insulating dielectric layer becomes more imperative. Low-κ dielectrics are exposed to many process steps in fabricating a multiple-metal-layer structure, and must then withstand the stresses of packaging and assembly. The Applied Producer ® Onyx™ chamber is a newly-developed chamber for κ repair treatment in logic devices at 28 nm and beyond. The novel Onyx process and its mechanism are discussed by FTIR analysis. K repair and RC improvement are also demonstrated.
This paper addresses refractive index (n), extinction coefficient (k), uniformity, and step coverage of APFx film, which can be optimized by varying process parameters, such as precursor flow rate, spacing, chamber pressure, and power. APFx shows good uniformity. APFx has a lower extinction coefficient at 633nm, which makes possible easier alignment. Moreover, APFx has good step coverage and a wide tuning range of conformality, which improves film integrity for photoresist rework.
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