High-volume fabrication of nanostructures requires nondestructive metrologies capable of measuring not only the pattern size but also the pattern shape profile. Measurement tool requirements will become more stringent as the feature size approaches 50 nm and tolerances of pattern shape will reach a few nanometers. A small angle x-ray scattering (SAXS) based technique has been demonstrated to have the capability of characterizing the average pitch size and pattern width to subnanometer precision. In this study, we report a simple, modeling-free protocol to extract cross-section information such as the average sidewall angle and the pattern height of line grating patterns from the SAXS data. Diffraction peak intensities and reciprocal space positions are measured while the sample is rotated around the axis perpendicular to the grating direction. Linear extrapolations of peak positions in reciprocal space allow a precise determination of both the sidewall angle and the pattern height.

Dopamine is a neurotransmitter that modulates arousal and motivation in humans and animals. It plays a central role in the brain "reward" system. Its dysregulation is involved in several debilitating disorders such as addiction, depression, Parkinson's disease, and schizophrenia. Dopamine neurotransmission and its reuptake in extracellular space takes place with millisecond temporal and nanometer spatial resolution. Novel nanoscale electrodes are needed with superior sensitivity and improved spatial resolution to gain an improved understanding of dopamine dysregulation. We report on a scalable fabrication of dopamine neurochemical probes of a nanostructured glassy carbon that is smaller than any existing dopamine sensor and arrays of more than 6000 nanorod probes. We also report on the electrochemical dopamine sensing of the glassy carbon nanorod electrode. Compared with a carbon fiber, the nanostructured glassy carbon nanorods provide about 2× higher sensitivity per unit area for dopamine sensing and more than 5× higher signal per unit area at low concentration of dopamine, with comparable LOD and time response. These glassy carbon nanorods were fabricated by pyrolysis of a lithographically defined polymeric nanostructure with an industry standard semiconductor fabrication infrastructure. The scalable fabrication strategy offers the potential to integrate these nanoscale carbon rods with an integrated circuit control system and with other complementary metal oxide semiconductor (CMOS) compatible sensors.

Water adsorption in porous low-k dielectrics has become a significant challenge for both back-end-of-line integration and reliability. A simple method is proposed here to achieve in situ observation of water structure and water-induced structure changes at the poly(methyl silsesquioxane) (PMSQ) surface and the PMSQ/solid buried interface at the molecular level by combining sum frequency generation (SFG) vibrational spectroscopic and Fourier transform infrared (FTIR) spectroscopic studies. First, in situ SFG investigations of water uptake were performed to provide direct evidence that water diffuses predominantly along the PMSQ/solid interface rather than through the bulk. Furthermore, SFG experiments were conducted at the PMSQ/water interface to simulate water behavior at the pore inner surfaces for porous low-k materials. Water molecules were found to form strong hydrogen bonds at the PMSQ surface, while weak hydrogen bonding was observed in the bulk. However, both strongly and weakly hydrogen bonded water components were detected at the PMSQ/SiO2 buried interface. This suggests that the water structures at PMSQ/solid buried interfaces are also affected by the nature of solid substrate. Moreover, the orientation of the Si-CH3 groups at the buried interface was permanently changed by water adsorption, which might due to low flexibility of Si-CH3 groups at the buried interface. In brief, this study provides direct evidence that water molecules tend to strongly bond (chemisorbed) with low-k dielectric at pore inner surfaces and at the low-k/solid interface of porous low-k dielectrics. Therefore, water components at the surfaces, rather than the bulk, are likely more responsible for chemisorbed water related degradation of the interconnection layer. Although the method developed here was based on a model system study, we believe it should be applicable to a wide variety of low-k materials.

As low-k dielectric/copper interconnects continue to scale down in size, the interfaces of low-k dielectric materials will increasingly determine the structure and properties of the materials. We report an in situ nondestructive characterization method to characterize the molecular structure at the surface and buried interface of silicon-supported low-k dielectric thin films using interface sensitive infrared-visible sum frequency generation vibrational spectroscopy (SFG). Film thickness-dependent reflected SFG signals were observed, which were explained by multiple reflections of the input and SFG beams within the low-k film. The effect of multiple reflections on the SFG signal was determined by incorporating thin-film interference into the local field factors at the low-k/air and Si/low-k interfaces. Simulated thickness-dependent SFG spectra were then used to deduce the relative contributions of the low-k/air and low-k/Si interfaces to the detected SFG signal. The nonlinear susceptibilities at each interface, which are directly related to the interfacial molecular structure, were then deduced from the isolated interfacial contributions to the detected SFG signal. The method developed here is general and demonstrates that SFG measurements can be integrated into other modern analytical and microfabrication methods that utilize silicon-based substrates. Therefore, the molecular structure at the surface and buried interface of thin polymer or organic films deposited on silicon substrates can be measured in the same experimental geometry used to measure many optical, electrical, and mechanical properties.

The viscoelastic properties of polymer thin films can have a significant impact on the performance in many small-scale devices. In this work, we use a phenomenon based on a thermally induced instability, termed thermal wrinkling, to measure viscoelastic properties of polystyrene films as a function of geometric confinement via changes in film thickness. With application of the appropriate buckling mechanics model for incompressible and geometrically confined films, we estimate the stress-relaxation modulus of polystyrene films by measuring the time-evolved wrinkle wavelength at fixed annealing temperatures. Specifically, we use time-temperature superposition to shift the stress relaxation curves and generate a modulus master curve for polystyrene films investigated here. On the basis of this master curve, we are able to identify the rubbery plateau, terminal relaxation time, and viscous flow region as a function of annealing time and temperatures that are well-above its glass transition. Our measurement technique and analysis provide an alternative means to measure viscoelastic properties and relaxation behavior of geometrically confined polymer films.