High-density data storage (HDDS) is urgently required to address ongoing rapid increases in amounts of information. Here we present a prototype sandwich device that has ternary data-storage performance. Three characteristic currents can be read out using a certain constant voltage after removal of the applied voltage. Two electron pull groups and one electron push group are identified as the species responsible for electron flow. We believe that our observation will offer an interesting and useful theoretical approach for a huge increase in the memory density of potential future devices.

To achieve ultrahigh density memory devices with the capacity of 3(n) or larger, organic materials with multilevel stable states are highly desirable. Here, we reported a novel larger stable heteroacene, 2,3,13,14-tetradecyloxy-5,11,16,22-tetraaza-6,10,17,21-tetrachloro-7,9,18,20-tetraoxa-8,19-dicyanoenneacene (CDPzN), which has two different types of heteroatoms (O and N) and nine linearly fused rings. The sandwich-structure memory devices based on CDPzN exhibited excellent ternary memory behaviors with high ON2/ON1/OFF current ratios of 10(6.3)/10(4.3)/1 and good stability for these three states.

By introducing a coplanar fluorenone into the center of an azo molecule, the turn-on voltages of the ternary memory devices are significantly decreased to lower than -2 V due to the improved crystallinity and the reduced charge injection barrier. The resulting low-power consumption devices will have great potential applications in high-performance chips for future portable nanoelectronic devices.

Organic small‐molecule‐based devices with multilevel electroresistive memory behaviors have attracted more and more attentions due to their super‐high data‐storage density. However, up to now, only ternary memory molecules have been reported, and ternary storage devices may not be compatible with the binary computing systems perfectly. In this work, a donor–acceptor structured molecule containing three electron acceptors is rationally designed and the field‐induced charge‐transfer processes can occur from the donors. Organic quaternary memory devices based on this molecule are successfully demonstrated for the first time. The switching threshold voltages of the memory device are –2.04, –2.73, and –3.96 V, and the current ratio of the “0,” “1,” “2,” and “3” states is 1:101.78:103.47:105.36, which indicate a low possibility of read and write errors. The results represent a further step in organic high‐density data‐storage devices and will inspire the further study in this field.

Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead‐free double perovskite Cs2AgBiBr6 is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium‐tin‐oxide/Cs2AgBiBr6/Au sandwich‐like memristors is retained after 1000 switching cycles, 105 s of reading, and 104 times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and 60Co γ‐ray irradiation for a dosage of 5 × 105 rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs2AgBiBr6 with a high memory performance will inspire further development of robust electronics using lead‐free double perovskites.