Femtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge 2 Sb 2 Te 5 films has been investigated by timeresolved microscopy. With an average fluence of approximately 10 mJ/cm 2 , a transient nonequilibrium state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.
Time resolved imaging has been used to investigate the whole process of the crystallization induced by intense 130 femtosecond laser pulses in as-deposited Ge1Sb2Te4 films. With an average fluence of 24mJ/cm2 a transient non-equilibrium state of the excited material is formed within 1 picosecond. The results are consistent with an electronically induced non-thermal phase transition.
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