Molybdenum disulfide (MoS 2 ) has been proved to be a potential electromagnetic wave (EMW) absorber. However, the limited EMW attenuation mechanisms and conductivity have always been recognized as the major challenges impeding their further developments. In this study, a new dielectric tuning strategy giving rise to high EMW attenuation performance by manipulating phase content (with 0, 24, 50, and 100 wt% 1T phase) toward MoS 2 is demonstrated. The greatly introduced 2H/1T interfaces facilitate the dipole distribution dynamics, and the metal-semiconductor mixed phase enhances the electron transfer ability. Benefiting from the structural merits, the MoS 2 with 50 wt% 1T absorber delivers the maximum reflection loss of −45.5 dB and effective absorbing bandwidth of ≈3.89 GHz, corresponding to nearly ten times higher than that of pure 2H counterpart. Moreover, the Computer Simulation Technology (CST) simulation and Lorentz transmission electron microscope are performed to visualize the structural advantages of MoS 2 absorbers with mixed 2H/1T phases. By manipulating the phase compositions, this study provides a deep understanding and opens an avenue in developing efficient and high performance transition metal dichalcogenides (e.g., WS 2 , MoSe 2 , and WSe 2 ) absorbers.
A dielectric loss-type
electromagnetic wave (EMW) absorber, especially
over a broad frequency range, is important yet challenging. As the
most typical dielectric attenuation absorber, carbon-based nanostructures
were highly pursued and studied. However, their poor impedance-matching
issues still exist. Here, to further optimize dielectric properties
and enhance reflection loss, ultrathin MoS2 nanosheets
encapsulated in hollow carbon spheres (MoS2@HCS) were prepared
via a facile template method. The diameter and shell thickness of
the as-prepared HCSs were ∼250 and ∼20 nm. The encapsulated
MoS2 nanosheets presented high dispersity and crystallinity.
Compared to a pure HCS or MoS2 absorber, MoS2@HCS exhibited an optimized impedance characteristic, which can be
attributed to the synergistic effects between HCSs (ensuring rapid
electron transmission and compensating the low conductivity of MoS2) and MoS2 nanosheets (exposing sufficient numbers
of active sites for polarizations and multi-reflection). Consequently,
the MoS2@HCS was endowed with −65 dB EMW attenuation
ability under 2 mm and the effective attenuation bandwidth under −20
dB was ∼3.3 GHz over the K-band under 1.2 mm and ∼3.4
GHz over the Ka-band under merely 0.7 mm. These results suggested
that the MoS2@HCS is a promising dielectric absorber for
practical applications. Meanwhile, this work introduces a facile and
versatile strategy, which could in principle be extended to other
transition metal sulfide@HCS for designing novel EMW absorbers.
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