In this work, experimental measurements of the electronic band gap of low-k organosilicate dielectrics will be presented and discussed. The measurement of bandgap energies of organosilicates will be made by examining the onset of inelastic energy loss in core-level atomic spectra using X-ray photoelectron spectroscopy. This energy serves as a reference point from which many other facets of the material can be understood, such as the location and presence of defect states in the bulk or at the interface. A comparison with other measurement techniques reported in the literature is presented. V C 2014 AIP Publishing LLC.

Abstract. This paper proposes a statistical model for mapping global landslide susceptibility based on logistic regression. After investigating explanatory factors for landslides in the existing literature, five factors were selected for model landslide susceptibility: relative relief, extreme precipitation, lithology, ground motion and soil moisture. When building the model, 70 % of landslide and nonlandslide points were randomly selected for logistic regression, and the others were used for model validation. To evaluate the accuracy of predictive models, this paper adopts several criteria including a receiver operating characteristic (ROC) curve method. Logistic regression experiments found all five factors to be significant in explaining landslide occurrence on a global scale. During the modeling process, percentage correct in confusion matrix of landslide classification was approximately 80 % and the area under the curve (AUC) was nearly 0.87. During the validation process, the above statistics were about 81 % and 0.88, respectively. Such a result indicates that the model has strong robustness and stable performance. This model found that at a global scale, soil moisture can be dominant in the occurrence of landslides and topographic factor may be secondary.

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Plasmas, known to emit high levels of vacuum ultraviolet (VUV) radiation, are used in the semiconductor industry for processing of low-k organosilicate glass (SiCOH) dielectric device structures. VUV irradiation induces photoconduction, photoemission, and photoinjection. These effects generate trapped charges within the dielectric film, which can degrade electrical properties of the dielectric. The amount of charge accumulation in low-k dielectrics depends on factors that affect photoconduction, photoemission, and photoinjection. Changes in the photo and intrinsic conductivities of SiCOH are also ascribed to the changes in the numbers of charged traps generated during VUV irradiation. The dielectric-substrate interface controls charge trapping by affecting photoinjection of charged carriers into the dielectric from the substrate. The number of trapped charges increases with increasing porosity of SiCOH because of charge trapping sites in the nanopores. Modifications to these three parameters, i.e., (1) VUV induced charge generation, (2) dielectric-substrate interface, and (3) porosity of dielectrics, can be used to reduce trappedcharge accumulation during processing of low-j SiCOH dielectrics. Photons from the plasma are responsible for trapped-charge accumulation within the dielectric, while ions stick primarily to the surface of the dielectrics. In addition, as the dielectric constant was decreased by adding porosity, the defect concentrations increased. V

Analysis of casualties due to landslides from 2000 to 2012 revealed that their spatial pattern was affected by terrain and other natural environmental factors, which resulted in a higher distribution of landslide casualty events in southern China than in northern China. Hotspots of landslide-generated casualties were in the western Sichuan mountainous area and Yunnan-Guizhou Plateau region, southeast hilly area, northern part of the loess hilly area, and Tianshan and Qilian Mountains. However, local distribution patterns indicated that landslide casualty events were also influenced by economic activity factors. To quantitatively analyse the influence of natural environment and human-economic activity factors, the Probability Model for Landslide Casualty Events in China (LCEC) was built based on logistic regression analysis. The results showed that relative relief, GDP growth rate, mean annual precipitation, fault zones, and population density were positively correlated with casualties caused by landslides. Notably, GDP growth rate ranked only second to relative relief as the primary factors in the probability of casualties due to landslides. The occurrence probability of a landslide casualty event increased 2.706 times with a GDP growth rate increase of 2.72%. In contrast, vegetation coverage was negatively correlated with casualties caused by landslides. The LCEC model was then applied to calculate the occurrence probability of landslide casualty events for each county in China. The results showed that there are 27 counties with high occurrence probability but zero casualty events. The 27 counties were divided into three categories: poverty-stricken counties, mineral-rich counties, and real-estate overexploited counties; these are key areas that should be emphasized in reducing landslide risk.

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In this letter, first we give a decomposition for any Lie-Poisson structure π g associated to the modular vector. In particular, π g splits into two compatible Lie-Poisson structures if dimg ≤ 3. As an application, we classified quadratic deformations of Lie-Poisson structures on R 3 up to linear diffeomorphisms.