The
field of neuromorphic computing systems has been through enormous
progress in recent years, whereas some issues are still remaining
to be solved. One of the biggest challenges in neuromorphic circuit
designing is the lack of a robust device with functions comparable
to or even better than the metal–oxide–semiconductor
field-effect transistor (MOSFET) used in traditional integrated circuits.
In this work, we demonstrated a MoS2 neuristor using a
dual-gate transistor structure. An ionic top gate is designed to control
the migration of ions, while an electronic back gate is used to control
electronic migration. By applying different driving signals, the MoS2 neuristor can be programmed as a neuron, a synapse, or an
n-type MOSFET, which can be seen as a fundamental building block in
the neuromorphic circuit design. The MoS2 neuristor provides
viable solutions for future reconfigurable neuromorphic systems and
can be a promising candidate for future neuromorphic computing.
A facile template-free method was proposed to fabricate a novel network structured mesoporous g-C3N4/TiO2 nano-heterojunction composite via protonation of base functionalities during the in situ growth of TiO2 nanoparticles on the surface of g-C3N4 under hydrothermal conditions.
Protonation pretreatment promotes the formation of a uniform g-C3N4/AgBr nanocomposite, thereby efficiently enhancing the photocatalytic activity through the Z-scheme charge transfer.
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