We design and synthesize four fused-ring electron acceptors based on 6,6,12,12-tetrakis(4-hexylphenyl)-indacenobis(dithieno[3,2-b;2',3'-d]thiophene) as the electron-rich unit and 1,1-dicyanomethylene-3-indanones with 0-2 fluorine substituents as the electron-deficient units. These four molecules exhibit broad (550-850 nm) and strong absorption with high extinction coefficients of (2.1-2.5) × 10 M cm. Fluorine substitution downshifts the LUMO energy level, red-shifts the absorption spectrum, and enhances electron mobility. The polymer solar cells based on the fluorinated electron acceptors exhibit power conversion efficiencies as high as 11.5%, much higher than that of their nonfluorinated counterpart (7.7%). We investigate the effects of the fluorine atom number and position on electronic properties, charge transport, film morphology, and photovoltaic properties.

A new fluorinated nonfullerene acceptor, ITIC-Th1, has been designed and synthesized by introducing fluorine (F) atoms onto the end-capping group 1,1-dicyanomethylene-3-indanone (IC). On the one hand, incorporation of F would improve intramolecular interaction, enhance the push-pull effect between the donor unit indacenodithieno[3,2-b]thiophene and the acceptor unit IC due to electron-withdrawing effect of F, and finally adjust energy levels and reduce bandgap, which is beneficial to light harvesting and enhancing short-circuit current density (J ). On the other hand, incorporation of F would improve intermolecular interactions through CF···S, CF···H, and CF···π noncovalent interactions and enhance electron mobility, which is beneficial to enhancing J and fill factor. Indeed, the results show that fluorinated ITIC-Th1 exhibits redshifted absorption, smaller optical bandgap, and higher electron mobility than the nonfluorinated ITIC-Th. Furthermore, nonfullerene organic solar cells (OSCs) based on fluorinated ITIC-Th1 electron acceptor and a wide-bandgap polymer donor FTAZ based on benzodithiophene and benzotriazole exhibit power conversion efficiency (PCE) as high as 12.1%, significantly higher than that of nonfluorinated ITIC-Th (8.88%). The PCE of 12.1% is the highest in fullerene and nonfullerene-based single-junction binary-blend OSCs. Moreover, the OSCs based on FTAZ:ITIC-Th1 show much better efficiency and better stability than the control devices based on FTAZ:PC BM (PCE = 5.22%).

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The device under testing was a plastic dynamic random access memory based on a donor-functionalized polyimide (TP6F-PI), which exhibited the ability to write, read, erase, and refresh the electrical states. The device had an ON/OFF current ratio up to 105, promising minimal misreading error. Both the on and off states were stable under a constant voltage stress of 1 V and survived up to 108 read cycles at 1 V.

A polymer‐memory device based on a copolymer containing carbazole (donor) and Eu‐complex (acceptor) groups in a metal/insulator/metal architecture is described. The nonvolatile device has two distinctive bistable conductivity states, and exhibits a high ON/OFF current ratio, a fast response time, and acceptable retention under ambient conditions. Application of a potential sets the device to the high‐conductivity ON state by generating holes (see Figure).

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A functional polymer (PVK-C60), containing carbazole moieties (electron donors) and fullerene moieties (electron-acceptors) in a molar ratio of about 100:1, was synthesized via covalent tethering of C60 to poly(N-vinylcarbazole) (PVK). The molecular structure and composition of PVK-C60 were characterized by FTIR, Raman, and UV-vis absorption spectroscopy, gel permeation chromatography (GPC), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CyV). The C60-modified PVK exhibited an enhanced glass-transition temperature (Tg = 226 degrees C) and good solubility in organic solvents such as toluene, tetrahydrofuran, chloroform, and N,N-dimethylformamide (DMF). It could be cast into transparent films from solutions. For a thin film of PVK-C60 sandwiched between an indium tin oxide (ITO) electrode and an Al electrode (ITO/PVK-C60/Al), the device behaved as nonvolatile flash (rewritable) memory with accessible electronic states that could be written, read, and erased. The polymer memory exhibited an ON/OFF current ratio of more than 105 and write/erase voltages around -2.8 V/+3.0 V. Both the ON and OFF states were stable under a constant voltage stress of -1 V for 12 h and survived up to 108 read cycles at -1 V under ambient conditions.

Conformation-induced volatile and nonvolatile conductance switching effects were demonstrated in non-conjugated polymers containing the same electroactive pendant groups. Single-layer devices of the structure indium-tin-oxide/polymer/aluminum were fabricated from two non-conjugated polymers with pendant carbazole groups in different spacer units. The device based on poly(2-(N-carbazolyl)ethyl methacrylate) (PMCz) exhibited nonvolatile write-once-read-many-times (WORM) memory behavior with an ON/OFF current ratio up to 106, while the device based on poly(9-(2-((4-vinylbenzyl)oxy)ethyl)-9H-carbazole) (PVBCz) exhibited volatile memory behavior with an ON/OFF current ratio of approximately 103. The formation of carbazole excimers resulting from conformation-induced conductance switching under an electric field was revealed in situ by fluorescence spectroscopy. The corresponding voltage-induced conformation ordering in the polymer film was captured by transmission electron microscopy. In the absence of a spacer unit between the pendant carbazole group and the main chain, regioregular poly(N-vinylcarbazole) (PVK) exhibited only one conductivity state (ON state). The differences in memory behavior among the three polymers were attributed to their inherent differences in the degree of regioregularity and ease of conformational relaxation of the field-induced regioregular carbazole groups. These conformational effects were in turn dictated by the chemical structure and steric effect of the spacer unit between the pendant carbazole group and the main chain.