In a Yb3+ laser, the two-energy level structure is close to the quasi-three-level model, but different from that for the Nd and Tm lasers, so it is necessary to investigate the quasi-three-level modeling that will be applied to the Yb3+ laser. Based on the energy level structure, cavity gain and loss as well as population distribution, we present the modeling. Introducing an effective cavity length factor, the laser intensity is calculated and the threshold is obtained. Comparison with the experiments, indicates that the effective cavity length ratio changes the fractional population function and loss, which would influence the threshold and output in turn. Applied to investigate the laser property in the process of end pumping Yb3+:YVO4 laser, we get the threshold being 1.1 W, corresponding to the L=1 mm and T=1%; whereas the threshold is 3.9 W, corresponding to the L=2 mm and T=10%.
In this paper, a closed-loop cavity of a tunable laser integrated onto a silicon chip is demonstrated. The closed-loop cavity consists of a semiconductor optical amplifier chip, two separated micro-ring resonators, and a U-shaped waveguide sub-loop, enabling dominating lasing in the counterclockwise direction. The lasing wavelength is tuned by varying the effective refractive index of the thermal ring-resonators. It has achieved wide tuning range (55.4 nm), high spectral purity (50-dB side mode suppression ratio), ∼1-mW output power, and 36-dB counter-propagation power suppression ratio. The integrated tunable laser has high potential in applications such as optical network, optical sensing, and integrated optoelectronic systems.
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