Nanoparticles (NPs) have had increasingly successful applications including in emissive or photovoltaic devices; however, trap states associated with the surface of NPs often drastically reduce the efficiency of devices and are difficult to detect spectroscopically. We show the applicability of photoconduction as the means of detecting and quantifying trap states in NPs. We performed time-of-flight (ToF) photoconduction measurements, using semiconducting poly[bis(4-phenyl)(4-butyphenyl)amine] (P-TPD) doped with either core/shell CdSeS/CdS quantum dots (QDs) or perovskite CsPbBr 3 NPs, both of which are carefully designed to be energetically matched. In the case of the QDs, a drop in the hole mobility from ∼10 −3 to ∼10 −4 cm 2 V −1 s −1 was observed when compared to a control sample, suggesting the presence of a hole trapping. These trap states were found to be around −5.0 to −4.9 eV from the vacuum level. The presence of the trap states was further supported by a coincident reduction in the photoluminescence (PL), quantum yield (QY), and lifetime of the core/shell QDs after purification. Using the measured reductions in the PL, QY, and lifetime, the surface trap state density was estimated to increase by between 20 and 40%, most likely due to a ligand detachment. In the case of the perovskite NP-doped samples, a mobility of ∼10 −3 cm 2 V −1 s −1 was measured. Thus, doping with perovskite NPs did not generate any obvious hole trapping from the P-TPD matrix. The absence of a trapping may be related to the reduced surface-to-volume ratio and NP number density of the perovskite NPs compared to the core/shell QDs, since the perovskite NPs are approximately 10 times larger in radius than that of the core/shell QDs. Our results suggest that to minimize the presence of trap states with a view to improving device performance, large-size perovskite NPs appear to be better than small-size QDs.
Spin–orbit torques (SOTs) provide an efficient way to electrically manipulate the magnetic order in spintronic devices. Compared with conventional ferromagnetic materials, ferrimagnetic materials have the advantages of antiferromagnetically coupled sublattices and induced ultrafast spin dynamics. In this paper, we study the current-induced magnetization switching in the ferrimagnetic Ta/GdFeCo/MgO system. Robust SOT-induced magnetization switching can be achieved at the magnetic compensation temperature point of around 70 K, where the magnetization is nearly zero and the coercivity can reach almost 3 T. The temperature dependence of the SOT efficiency is quantified by the second harmonic method, and the enhanced SOT efficiency near the magnetic compensation temperature is attributed to the negative exchange coupling between the two sublattices of CoFe and Gd. This work demonstrates the SOT switching of the nearly compensated ferrimagnet, with great potential for future magnetic interaction-free and ultrafast ferrimagnetic applications.
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