Singlet fission, the process of forming two triplet excitons from one singlet exciton, is a characteristic reserved for only a handful of organic molecules due to the atypical energetic requirement for low energy excited triplet states. The predominant strategy for achieving such a trait is by increasing ground state diradical character; however, this greatly reduces ambient stability. Herein, we exploit Baird's rule of excited state aromaticity to manipulate the singlet−triplet energy gap and create novel singlet fission candidates. We achieve this through the inclusion of a [4n] 5-membered heterocycle, whose electronic resonance promotes aromaticity in the triplet state, stabilizing its energy relative to the singlet excited state. Using this theory, we design a family of derivatives of indolonaphthyridine thiophene (INDT) with highly tunable excited state energies. Not only do we access novel singlet fission materials, they also exhibit excellent ambient stability, imparted due to the delocalized nature of the triplet excited state. Spin-coated films retained up to 85% activity after several weeks of exposure to oxygen and light, while analogous films of TIPS-pentacene showed full degradation after 4 days, showcasing the excellent stability of this class of singlet fission scaffold. Extension of our theoretical analysis to almost ten thousand candidates reveals an unprecedented degree of tunability and several thousand potential fission-capable candidates, while clearly demonstrating the relationship between triplet aromaticity and singlet−triplet energy gap, confirming this novel strategy for manipulating the exchange energy in organic materials.

Functionalization of organic semiconductors through the attachment of bulky side groups to the conjugated core has imparted solution processability to this class of otherwise insoluble materials. A consequence of this functionalization is that the bulky side groups impact the solid-state packing of these materials. To examine the importance of side-group electronic character on accessing the structural phase space of functionalized materials, germanium was substituted for silicon in triisopropyl­silylethynyl­pentacene (TIPS-Pn) to produce triisopropyl­germanyl­ethynyl­pentacene (TIPGe-Pn), with the TIPGe side group comparable in size to TIPS, but higher in electron density. We find TIPGe-Pn single crystals exhibit slip-stack, herringbone, and brickwork packing motifs depending on growth conditions, a stark contrast to TIPS-Pn, which accesses only the brickwork packing motif in both single crystals and thin films. Polycrystalline thin films of TIPGe-Pn exhibit two new, unidentified polymorphs from spin-coating and postdeposition annealing. Our experiments suggest that access to the structural phase space is not guided solely by the size of the side group; the electronic character of the side group in functionalized compounds also plays a significant role. As such, simple atomistic substitutions can cause significant differences in the accessible solid structures.

Herein, we describe the design and synthesis of a suite of molecules based on a benzodithiophene "universal crystal engineering core". After computationally screening derivatives, a trialkylsilylethynebased crystal engineering strategy was employed to tailor the crystal packing for use as the active material in an organic field-effect transistor. Electronic structure calculations were undertaken to reveal derivatives that exhibit exceptional potential for high-efficiency hole transport. The promising theoretical properties are reflected in the preliminary device results, with the computationally optimized material showing simple solution processing, enhanced stability, and a maximum hole mobility of 1.6 cm 2 V À1 s À1 .

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Charge-carrier transport in thin-film organic semiconductors is strongly related to the molecular structure and the solid-state packing, which in turn are dependent on materials processing and device configurations. We report on the synthesis and characterization of a series of  (trialkylsilyl)­ethynyl-substituted dinaphtho-fused s-indacenes that include three regioisomers: the linear, syn, and anti isomers. Structure–property relationships are established for these antiaromatic compounds by combining X-ray diffraction with field-effect transistor measurements and density functional theory (DFT) evaluations of the electronic band structures and intermolecular electronic couplings. High-performance, solution-processed organic thin-film transistors with charge-carrier mobilities over 7 cm2/(V s) are demonstrated upon optimization of the thin-film morphology. The DFT-derived crystal band structures provide insight into the varied performance metrics observed across the materials, though the fundamental limits of performance are not reached when the film quality is poor. The totality of the results presents the antiaromatic dinaphtho-fused s-indacenes as intriguing building blocks for molecular materials for semiconducting applications.

Solution processed organic field effect transistors can become ubiquitous in flexible optoelectronics. While progress in material and device design has been astonishing, low environmental and operational stabilities remain longstanding problems obstructing their immediate deployment in real world applications. Here, we introduce a strategy to identify the most probable and severe degradation pathways in organic transistors and then implement a method to eliminate the main sources of instabilities. Real time monitoring of the energetic distribution and transformation of electronic trap states during device operation, in conjunction with simulations, revealed the nature of traps responsible for performance degradation. With this information, we designed the most efficient encapsulation strategy for each device type, which resulted in fabrication of high performance, environmentally and operationally stable small molecule and polymeric transistors with consistent mobility and unparalleled threshold voltage shifts as low as 0.1 V under the application of high bias stress in air.

Using a simple π-conjugated trimer, EDOT-phenylene-EDOT (where EDOT = 3,4-ethylenedioxythiophene), we evaluate the effect that fluorine substituents have upon changes in conformation, conjugation and oxidation potentials in π-conjugated structures. These variations are assessed as a function of the fluorine atom's propensity to feature in hydrogen and/or halogen bonding with other heteroatoms. The molecular motif was chosen because the EDOT unit presents the possibility of competing O•••X or S•••X non-covalent contacts (where X = H or F). Such non-bonding interactions are acknowledged to be highly influential in dictating molecular and polymer morphology and inducing changes in certain physical properties. We studied four compounds, beginning with an unsubstituted bridging phenylene ring and then adding one, two, or four fluorine units to the parent molecule. Our studies involve single crystal XRD studies, cyclic voltammetry, absorption spectroscopy and density functional theory calculations to identify the dominant non-covalent interactions and elucidate their effects on the molecules described. Experimental studies have also been carried out on the corresponding electrochemically synthesized polymers to confirm that these non-covalent interactions and their effects persist in polymers. Our findings show that hydrogen bonding and halogen bonding feature in these molecules and their corresponding polymers.

Materials design and discovery are often hampered by the slow pace and materials and human costs associated with Edisonian trial-and-error screening approaches. Recent advances in computational power, theoretical methods, and data science techniques, however, are being manifest in a convergence of these tools to enable in silico materials discovery. Here, we present the development and deployment of computational materials data and data analytic approaches for crystalline organic semiconductors. The OCELOT (Organic Crystals in Electronic and Light-Oriented Technologies) infrastructure, consisting of a Python-based OCELOT application programming interface and OCELOT database, is designed to enable rapid materials exploration. The database contains a descriptor-based schema for high-throughput calculations that have been implemented on more than 56 000 experimental crystal structures derived from 47 000 distinct molecular structures. OCELOT is open-access and accessible via a web-user interface at https://oscar.as.uky.edu.