Due to its perovskite crystal structure and good conductivity, LaNiO3(LNO) can be used as the electrode for piezoelectric and ferroelectric films. With the development of the silicon-based integrated ferroelectrics, preparation of LNO electrode film with good conductivity is of great importance for high-performance ferroelectric films. In this paper, LNO sol was prepared using the nickel acetate and the lanthanum nitrate as starting materials, with the acrylic acid as stablizer. Through the sol-gel process, LNO films with certain crystal orientation were prepared on silicon substrate. The film microstructure and electrical properties were analyzed. Results indicate that through proper sol component and heat treatment process, (100)-oriented, mirror-like LNO films with low surface resistance of 50 Ω/ can be obtained, which can be used as the electrode for the ferroelectric films.
Using La(NO3)3•nH2O and Ni(CH3COO)2•4H2O as starting materials, alcohol mixed with methoxyethanol as solvent, the LaNiO3 (LNO) solution was prepared. Using this solution, conducting LNO films with sheet resistance of 10Ω were obtained. XRD and HRTEM indicate that the LNO films are epitaxially grown on LaAlO3 (LAO) substrates. Using Pb(CH3COO)2•3H2O, La(NO3)3•nH2O, Ti(OC4H9)4, Zr(OC4H9)4 as starting materials, the PZT films were prepared on the LNO films. The PZT films are c-oriented. The as-prepared PZT film has a remanent polarization of 34.7µC/cm2, superior to the PZT film with random orientation and a remanent polarization of 18.4µC/cm2 prepared on ITO/quartz substrate.
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