A supplemental appendix to this article is published electronically only at http://jdr.sagepub.com/supplemental.

Close-packed micro-lenses with dimensions of the order of wavelength have been integrated onto the indium-tin-oxide (ITO) layer of GaN light-emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self-assembled silica nanosphere array by dry etching, leaving the semiconductor layer damage-free. An enhancement of up to 63.5% on optical output power from the lensed light-emitting diode (LED) has been observed. Lens-patterned LEDs are also found to exhibit reduced emission divergence. Three-dimensional finite-difference time-domain simulations performed for light extraction and emission characteristics are found to be consistent with the observed results.

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Employing an n-body Ni-Mo potential, a molecular dynamics simulation is performed to study the crystalto-amorphous transition of Ni-and Mo-rich solid solutions with increasing Mo and Ni content, respectively. It is found that the Ni-and Mo-rich supersaturated solid solutions become unstable and transform into amorphous states when the Mo and Ni contents are beyond the critical concentrations at 21 at. % of Mo and 25 at. % of Ni, respectively. The possible correlation of the calculated concentrations with the glass-forming ability of the Ni-Mo system is also discussed. ͓S0163-1829͑99͒15321-9͔