The stress states in AlN nanorods deposited on Si and its effect on optical properties have been investigated by means of Raman scattering and photoluminescence methods. The observed frequency downshift and linewidth broadening from temperature-dependent Raman scattering can be well described by an empirical relationship taking into account the contributions of the thermal expansion and decay of optical phonons. The phonon-energy difference of the E 2 ͑high͒ mode between the stress-free bulk-AlN and AlN nanorods appears to increase with increasing temperature, demonstrating that differential thermal expansion between the Si-substrate and AlN nanorods is the key parameter reflecting the stress in the nanorods.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.