In our publication on ''Electronic Structure and Bonding of Au on SiO 2 Cluster: A Nanobullet for Tumors'' [1] we inadvertently identified 0.52 eV to be equivalent to 645 nm. It should be 2383 nm. We thank Dr. Sven Neukermans for pointing out this error. When two dangling bonds of Si 3 O 6 cluster are saturated with two Au atoms, the optical gap reduces to 1.65 eV (751 nm) which is in the infrared range. Thus, it is important to control the amount of gold on silica so that the gold coated silica cluster can absorb infrared light. We also missed citing an earlier work of Bromley and co-workers [2] who have found cagelike geometry of SiO 2 12 clusters which has lower energy than the structure used in our calculation, and SiO 2 n (6 < n < 11) clusters are not chainlike. This does not affect the conclusion of our Letter where we show that Au atoms attach to Si with dangling bonds and consequently reduce the highest occupied molecular orbital -lowest unoccupied molecular orbital gap.We also acknowledge partial support of our work by the Department of Energy (DEFG02-96ER45579).
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