The Fe 0.95 Co 0.05 Si 2 semiconducting film has been successfully grown on glass substrate by magnetron sputtering at substrate temperature of 637 K and then thermal annealing at 823 K for one hour in high vacuum. The Raman data and high Seebeck coefficient suggested that the β-Fe 0.95 Co 0.05 Si 2 semiconducting film was achieved. Room temperature ferromagnetism was observed, and the ferromagnetic phase transition was at about * Corresponding author. 1250097-1 Mod. Phys. Lett. B 2012.26. Downloaded from www.worldscientific.com by NEW YORK UNIVERSITY on 02/06/15. For personal use only. Y. P. Han et al. 380 K. The possible reason for the ferromagnetism of the β-Fe 0.95 Co 0.05 Si 2 semiconducting film was discussed.
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