The present study investigates the piezoresistive properties of polycrystalline MoS2 film for strain-sensing applications. The gauge factor (GF) of the flexible MoS2 device (MoS2/PET) has been calculated to be 102 ± 5 in the stress range from ~7 MPa to ~14 MPa. In addition, to improve the sensing stress range, the flexible strain sensors are encapsulated by SU-8. The effect of encapsulation layer thickness is reflected in the GF, which is attributed to the shifting of the neutral axis. However, the calculated GF is constant in the higher stress range, 80 ± 2 and 12 ± 1 for 2 μm and 10 μm thick SU-8, respectively. Herein, we report a cost-effective and scalable approach to fabricate large-area polycrystalline MoS2-based flexible sensors for a wider stress range. The encapsulated devices remained undistorted and intact for stress values beyond 14 MPa. Further, we demonstrate the durability of the fabricated sensors with body movements, such as hand gestures, for all the three types of strain sensor.
The further commercialization of spintronic memory devices depends on the development of methods by which to assess performance. This paper presents an approach to the atomistic investigation of switching performance in spin transfer torque (STT) magneto-resistive random access memory (MRAM) devices with the use of interface imperfection model. Switching simulation in the nanosecond regime was made possible under this model, and we first time demonstrate that switching time is inversely proportional to interface imperfection (i.e. roughness). In investigating the damping of CoFeB/MgO films, we analyzed the effective damping constant , which cannot be accurately predicted for ferromagnetic layers of less than 2 nm using existing micromagnetic models. The proposed model includes a roughness parameter, which has nearly no effect on the effective damping constant in films of >2nm, but a profound effect in films of <2nm, reaching a 27% decrease in a 1.0 nm CoFeB film. Our finding is supported by the experimental data of classic references. We expect that these results will prove valuable in magnetic simulation and research on MRAM with ultrathin films.
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