Heavy pnictogen chalcohalides offer various shades from the same palette, like “Paysage” by Nicolas de Staël. Their versatility and tunability lead to a new world of possible applications.
Herein, we present memristive, thin film devices made of methylammonium bismuth iodide that exhibit a wide variety of neuromorphic effects simultaneously. Described materials have the potential to become universal cells in artificial neural networks.
Lead
halides in an asymmetric layered structure form memristive
devices which are controlled by the electronic structure of the PbX2|metal interface. In this paper, we explain the mechanism
that stands behind the I–V pinched hysteresis loop of the device and shortly present its synaptic-like
plasticity (spike-timing-dependent plasticity and spike-rate-dependent
plasticity) and nonvolatile memory effects. This memristive element
was incorporated into a reservoir system, in particular, the echo-state
network with delayed feedback, which exhibits brain-like recurrent
behavior and demonstrates metaplasticity as one of the available learning
mechanisms. It can serve as a classification system that classifies
input signals according to their amplitude.
The story of information processing is a story of great success. Todays' microprocessors are devices of unprecedented complexity and MOSFET transistors are considered as the most widely produced artifact in the history of mankind. The current miniaturization of electronic circuits is pushed almost to the physical limit and begins to suffer from various parasitic effects. These facts stimulate intense research on neuromimetic devices. This feature article is devoted to various in materio implementation of neuromimetic processes, including neuronal dynamics, synaptic plasticity, and higher-level signal and information processing, along with more sophisticated implementations, including signal processing, speech recognition and data security. Due to vast number of papers in the field, only a subjective selection of topics is presented in this review.
The
operation of an FTO/[SnI4{(C6H5)2SO}2]/Cu memristor is based on the Schottky
barrier modulation due to electron trapping/detrapping at the interface
states. The presented memristive bipolar device has an asymmetric
current–voltage characteristic and multiple resistance states,
which can be achieved by the application of impulses with different
amplitudes and durations. STDP measurement performed with symmetric
sawtooth voltage pulses results in the asymmetric Hebbian-like learning
pattern. The incorporation of the device in a particular type of the
reservoir systema single node echo state machineallowed
observation of signal processing in a feedback-loop equipped system:
classification according to the initial pulse amplitude and generation
of pulse sequences of a random length.
Organic‐inorganic perovskites despite being known for their extraordinary performance in solar cell research areas are also a workhorse in the field of unconventional information processing. Here, a neuromimetic behaviour is presented in a perovskite device with the potential to act as an artificial synapse. In addition, perovskite layer is combined with one of the non‐stoichiometric polymeric forms of carbon nitride (C3N4). Such a device can operate not only according to the principles of non‐von Neumann architecture but also utilizes two different stimuli as information carriers–electric current and/or light. This in turn can lead towards the development of next‐generation information processing/storage units.
A clockwise and anticlockwise I–V pattern observed for memristive devices based on bismuth(iii) iodide organic–inorganic complexes and different metal electrodes.
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