Current-induced magnetization switching
by spin–orbit torque
generated in heavy metals offers an enticing realm for energy-efficient
memory and logic devices. The spin Hall efficiency is a key parameter
in describing the generation of spin current. Recent findings have
reported enhancement of spin Hall efficiency by mechanical strain,
but its origin remains elusive. Here, we demonstrate a 45% increase
in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of
which 78% of the enhancement was preserved even after the strain was
removed. Spin transparency and X-ray magnetic circular dichroism revealed
that the enhancement was attributed to a bulk effect in the Pt layer.
This was further confirmed by the linear relationship between the
spin Hall efficiency and resistivity, which indicates an increase
in skew-scattering. These findings shed light on the origin of enhancement
and are promising in shaping future utilization of mechanical strain
for energy-efficient devices.
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