We present the design and characterization of Oband and C-band silicon photonic (SiP) traveling wave Mach-Zehnder modulators (TW-MZM) allowing 220 Gbps/λ net rate operation. The designed modulators show over 45 GHz 3-dB E-O bandwidth with a single-segment design. In the O-band, with simple linear feed forward equalization, we transmit net 203 (200) Gbps signal over 2 km (10 km) of single-mode fiber (SMF) below the hard-decision forward error correction (HD-FEC) BER threshold of 3.8×10 -3 . With the aid of nonlinear Volterra equalizer and one 2.3Vpp driving signal, we transmit net 225 (216) Gbps PAM8 signals assuming 20% overhead soft-decision FEC with a normalized general mutual information (NGMI) threshold of 0.8798 over 2 km (10 km) of SMF. The C-band design enables net 220 Gbps in B2B and net 215 Gbps over 500 m of SMF above the specified NGMI threshold. These results are the highest reported net rate for SiP MZM in an intensity modulation direct-detection (IM/DD) system, fabricated entirely in a commercial foundry. Index Terms-Intensity modulation, electrooptic modulators, optical interconnections, Volterra equalization.3, which is the highest reported rate for a Si MRM. In [12], 200 Gbps PAM6 (net 167 Gbps) signal transmission over 1 km of SMF was achieved at a BER below the 20% HD-FEC threshold of 1.5×10 -2 using a SiP TW-MZM with a 3-dB EO bandwidth
We investigate thermal effects in widely tunable laser transmitters based on an integrated single chip design. The chip contains a sampled-grating distributed Bragg reflector (SG-DBR) laser monolithically integrated with a semiconductor optical amplifier (SOA) and an electroabsorption modulator (EAM). The thermal impedance of the ridge structure is evaluated through simulation and experiment, and thermal crosstalk between sections is examined. Heating of the mirrors by neighboring sections is found to result in unintentional offsets in wavelength tuning. Thermal effects in the EAM are examined in depth. A positive feedback mechanism causes local temperature rise at the modulator input, with the potential to trigger catastrophic thermal runaway. A self-consistent finite-element model is developed to simulate the EAM temperature profile and device performance. This model is used to optimize the device, resulting in integrated EAMs that achieve a dissipated power limit in excess of 300 mW.
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