Turbostratic graphene is a multilayer graphene, which has exotic electrical properties similar to those of monolayer graphene due to the low interlayer interaction. Additionally, the stacking structure of the turbostratic multilayer graphene can decrease the effect of attachment of charge impurities and surface roughness. This paper explores the growth of high-purity and high-quality turbostratic graphene with different interlayer spacings by calcining ferric chloride and sucrose at 1000 °C for 1 h under an argon atmosphere. X-ray diffraction patterns and Raman results imply that the turbostratic graphene contains two different interlayer spacings: 3.435 and 3.55 Å. The 3.55 Å turbostratic graphene is on top of the 3.435 Å turbostratic graphene, and there is an AB stacking pattern between the topmost graphene layer of 3.435 Å turbostratic graphene and the first graphene layer of the 3.55 Å turbostratic graphene, with an interlayer spacing of 3.35 Å. The two different interlayer spacings of turbostratic graphene arise from different cooling rates between the higher temperature ranges (>700 °C) and lower temperatures (<700 °C).

The growth of turbostratic stacked graphene using waste ferric chloride solution as a feedstock.

Graphene is a flat monolayer of carbon atoms arranged in a honeycomb lattice. Graphene has many outstanding properties such as high electron mobility, superb strength, transparency and great flexibility. These exotic properties make graphene a promising candidate for solar cell, fuel cell, battery, supercapacitor and so on. In this report, we have studied the effect of acetic acid pre-treatment on the growth temperature of graphene on copper by thermal chemical vapor deposition (CVD). In case of graphene growth without acetic acid pre-treatment, the high temperature of 1000 °C is needed for the growth of graphene by CVD. In contrast, the growth temperature can be decreased to 800 °C for graphene growth with acetic acid pre-treatment. We found that acetic acid pre-treatment can eliminate copper oxide from the sample surface resulting in the growth temperature of graphene decreases.