We investigated the fabrication of
inkjet-printed SnO2 hole-blocking layers (HBLs) for organic
photodiodes (OPDs). HBLs
printed at different drop spacings were fabricated, and the effect
of printing parameters on the layer quality was analyzed. These layers
were incorporated into polymer:nonfullerene bulk-heterojunction OPDs,
and their influence on the rectification, spectral responsivity, specific
detectivity, and detection speed of the device was investigated. The
OPDs fabricated with a drop spacing of 35 μm corresponding to
a thickness of 31 ± 7 nm exhibited the best overall performance.
These OPDs reached state-of-the-art performance with spectral responsivities
of >0.5 A W–1, low dark current densities in
the
order of 5 nA cm–2, bandwidths of >2 MHz, and
peak
specific detectivities of ∼1011 Jones at 740 nm.
The competitive performance of optoelectronic devices based on advanced organic semiconductors increasingly calls for suitably scalable processing schemes to capitalise on their application potential. With performance benchmarks typically established by...
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