In
this paper, we report the design, synthesis and semiconducting
behavior of two conjugated D–A polymers P-BPDTT and P-BPDBT which entail BPD, a Pechmann
dye framework, as electron accepting moieties, and thieno[3,2-b]thiophene and 2,2′-bithiophene as electron donating
moieties. Their HOMO/LUMO energies and bandgaps were estimated based
on the respective cyclic voltammgrams and absorption spectra of thin
films. P-BPDTT possesses lower LUMO level and narrower
bandgap than P-BPDBT. On the basis of the characterization
of the field-effect transistors, a thin film of P-BPDTT exhibits ambipolar semiconducting properties with hole and electron
mobilities reaching 1.24 cm2 V–1 s–1 and 0.82 cm2 V–1 s–1, respectively, after thermal annealing. In comparison,
thin film of P-BPDBT only shows p-type
semiconducting behavior with hole mobility up to 1.37 cm2 V–1 s–1. AFM and XRD studies
were presented to understand the interchain arrangements on the substrates
and the variation of carrier mobilities.
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