Using a simple electrochemical depositing process, iron and cobalt-doped diamond-like carbon (DLC) films were deposited on Si (100) substrates. The results showed that metallic elements were inhomogeneously doped into highly cross-linking amorphous carbon matrix, forming the typical nanocrystalline/amorphous nanocomposite structure, and simultaneously the microsturcture of amorphous carbon was changed by the doping of metals. Field emission performance showed that the incorporation of iron and cobalt effectively decreases the threshold field from 13.5 V/mm to 8.0 V/mm and 6.5 V/mm, respectively, and a highest current density of the Co-DLC film was about 1.2 mA/cm 2 at the electric field of 23.5 V/mm.
A copper nitride (Cu3N) thin film is deposited on a Si substrate by the reactive magnetron sputtering method. The XPS measurements of the composite film indicate that the Cu content in the film is increased to 80.82 at.% and the value of the Cu/N ratio to 4.2:1 by introducing 4% H2 into the reactive gas. X-ray diffraction measurements show that the film is composed of Cu3N crystallites with an anti-ReO3 structure. The effects of the increase of copper content on the field emission characteristics of the Cu3N thin film are investigated. Significant improvement in emission current density and emission repeatability could be attributed to the geometric field enhancement, caused by numerous surface nanotips, and the decrease of resistivity of the film.
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