The additive manufacturing (AM) technique can produce Ti-6Al-4V ELI (extra low interstitial) alloy for personalized biomedical devices. However, the Ti-6Al-4V ELI alloy presents poor tribological behavior. Regarding this, coatings are a feasible approach to improve the wear resistance of this alloy. In the literature, the tribological behavior of TiO2 coatings incorporated with Ca and P formed by one-step plasma electrolytic oxidation (PEO) on Ti-6Al-4V ELI alloy processed by AM has not been investigated. Thus, in the present work, it was studied the influence of Ti-6Al-4V ELI alloy processed by AM on the wear resistance and morphologic of the coating obtained by PEO (plasma electrolytic oxidation). In this way, three different voltages (200, 250, and 300 V) were employed for the PEO process and the voltage effect on the properties of the coatings. The coatings were characterized by contact profilometry, scanning electron microscopy, energy-dispersive spectroscopy, the sessile drop method, grazing-incidence X-ray diffraction, and wear tests, on a ball-on-plate tribometer. The increase in applied voltage promoted an increase in roughness, pore area, and a decrease in the pore population of the coatings. In addition, the coatings, mainly composed of anatase and rutile, showed good adhesion to the metallic substrate, and the presence of bioactive elements Ca and P were detected. The thickness of the coatings obtained by PEO increases drastically for voltages higher than 250 V (from 4.50 ± 0.33 to 23.83 ± 1.5 µm). However, coatings obtained with lower voltages presented thin and dense layers, which promoted a superior wear resistance (increase in wear rate from 1.99 × 10−6 to 2.60 × 10−5 mm3/s). Finally, compared to the uncoated substrate, the PEO coatings increased the wear resistance of the titanium alloy obtained by AM, also showing a superior wear resistance compared to the commercial Ti-6Al-4V alloy previously evaluated, being such a positive and promising behavior for application in the area of metallic implants.
