Miniaturization of magnonic devices for wave-like computing requires emission of short-wavelength spin waves, a key feature that cannot be achieved with microwave antennas. In this paper, we propose a tunable source of short-wavelength spin waves based on highly localized and strongly pinned magnetic domain walls in ferroelectric-ferromagnetic bilayers. When driven into oscillation by a microwave spin-polarized current, the magnetic domain walls emit spin waves with the same frequency as the excitation current. The amplitude of the emitted spin waves and the range of attainable excitation frequencies depend on the availability of domain wall resonance modes. In this respect, pinned domain walls in magnetic nanowires are particularly attractive. In this geometry, spin wave confinement perpendicular to the nanowire axis produces a multitude of domain wall resonances enabling efficient spin wave emission at frequencies up to 100 GHz and wavelengths down to 20 nm. At high frequency, the emission of spin waves in magnetic nanowires becomes monochromatic. Moreover, pinning of magnetic domain wall oscillators onto the same ferroelectric domain boundary in parallel nanowires guarantees good coherency between spin wave sources, which opens perspectives towards the realization of Mach-Zehnder type logic devices and sensors.

No abstract

Electronic, magnetic, and transport properties of the antiferromagnetic (AFM) CuMnAs alloy with tetragonal structure, promising for the AFM spintronics, are studied from first principles using the Vienna ab-initio simulation package. We investigate the site-occupation of sublattices and the lattice parameters of three competing phases. We analyze the factors that determine which of the three conceivable structures will prevail. We then estimate formation energies of possible defects for the experimentally prepared lattice structure. MnCu-and CuMn-antisites as well as Mn↔Cu swaps and vacancies on Mn or Cu sublattices were identified as possible candidates for defects in CuMnAs. We find that the interactions of the growing thin film with the substrate and with vacuum as well as the electron correlations are important for the phase stability while the effect of defects is weak. In the next step, using the tight-binding linear muffin-tin orbital method for the experimental structure, we estimate transport properties for systems containing defects with low formation energies. Finally, we determine the exchange interactions and estimate the Néel temperature of the AFM-CuMnAs alloy using the Monte Carlo approach. A good agreement of the calculated resistivity and Néel temperature with experimental data makes possible to draw conclusions concerning the competing phases.

Spin-transfer torque and current-induced spin dynamics in spin-valve nanopillars with the free magnetic layer located between two magnetic films of fixed magnetic moments is considered theoretically. The spintransfer torque in the limit of diffusive spin transport is calculated as a function of magnetic configuration. It is shown that noncollinear magnetic configuration of the outermost magnetic layers has a strong influence on the spin torque and spin dynamics of the central free layer. Employing macrospin simulations we make some predictions on the free layer spin dynamics in spin valves composed of various magnetic layers. We also present a formula for critical current in noncollinear magnetic configurations, which shows that the magnitude of critical current can be several times smaller than that in typical single spin valves.

We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi2Te3 doped with Mn atoms in substitutional (MnBi) and interstitial van der Waals gap positions (Mni), which act as acceptors and donors, respectively. The effect of native BiTe-and TeBi-antisite defects and their influence on calculated electronic transport properties is also investigated. We have studied four models representing typical cases, namely, (i) Bi2Te3 with and without native defects, (ii) MnBi defects with and without native defects, (iii) the same, but for Mni defects, and (iv) the combined presence of MnBi and Mni. It has been found that lattice relaxations around MnBi defects play an important role for both magnetic and transport properties.The resistivity is strongly influenced by the amount of carriers, their type, and by the relative positions of the Mn-impurity energy levels and the Fermi energy. Our results suggest strategies to tune bulk resistivities, and also clarify the location of Mn atoms in samples. Calculations indicate that at least two of the considered defects have to be present simultaneously in order to explain the experimental observations, and the role of interstitials may be more important than expected.

No abstract

The magnetization process of the spin-1 Heisenberg dimer model with the uniaxial or biaxial single-ion anisotropy is particularly investigated in connection with recent experimental high-field measurements performed on the single-crystal sample of the homodinuclear nickel(The results obtained from the exact numerical diagonalization indicate a striking magnetization process with a marked spatial dependence on the applied magnetic field for arbitrary but finite single-ion anisotropy. It is demonstrated that the field range, which corresponds to an intermediate magnetization plateau emerging at a half of the saturation magnetization, basically depends on a single-ion anisotropy strength as well as a spatial orientation of the applied field. The breakdown of the intermediate magnetization plateau is discussed at length in relation to the single-ion anisotropy strength.

No abstract