The Schottky barrier for carrier injection into 2D semiconductors can be effectively tuned by using 2D metals.

We fabricate and measure graded-index “black silicon” surfaces and find the underlying scaling law governing reflectance. Wet etching (100) silicon in HAuCl4, HF, and H2O2 produces Au nanoparticles that catalyze formation of a network of [100]-oriented nanopores. This network grades the near-surface optical constants and reduces reflectance to below 2% at wavelengths from 300 to 1000 nm. As the density-grade depth increases, reflectance decreases exponentially with a characteristic grade depth of about 1/8 the vacuum wavelength or half the wavelength in Si. Observation of Au nanoparticles at the ends of cylindrical nanopores confirms local catalytic action of moving Au nanoparticles.

We study optical effects and factors limiting performance of our confirmed 16.8% efficiency “black silicon” solar cells. The cells incorporate density-graded nanoporous surface layers made by a one-step nanoparticle-catalyzed etch and reflect less than 3% of the solar spectrum, with no conventional antireflection coating. The cells are limited by recombination in the nanoporous layer which decreases short-wavelength spectral response. The optimum density-graded layer depth is then a compromise between reflectance reduction and recombination loss. Finally, we propose universal design rules for high-efficiency solar cells based on density-graded surfaces.

Si Quantum dots (QD's) are offering the possibilities for improving the efficiency and lowering the cost of solar cells. In this paper we study the PV-related critical factors that may affect design of Si QDs solar cell by performing atomistic calculation including many-body interaction. First, we find that the weak absorption in bulk Si is significantly enhanced in Si QDs, specially in small dot size, due to quantum-confinement induced mixing of G-character into the X-like conduction band states. We demonstrate that the atomic symmetry of Si QD also plays an important role on its bandgap and absorption spectrum. Second, quantum confinement has a detrimental effect on another PV propertyit significantly enhances the exciton binding energy in Si QDs, leading to difficulty in charge separation. We observe universal linear dependence of exciton binding energy versus excitonic gap for all Si QDs. Knowledge of this universal linear function will be helpful to obtain experimentally the exciton binding energy by just measuring the optical gap without requiring knowledge on dot shape, size, and surface treatment. Third, we evaluate the possibility of resonant charge transport in an array of Si QDs via miniband channels created by dot-dot coupling. We show that for such charge transport the Si QDs embedded into a matrix should have tight size tolerances and be very closely spaced. Fourth, we find that the loss of quantum confinement effect induced by dot-dot coupling is negligible -smaller than 70 meV even for two dots at intimate contact.

We measure silane density and Sulfo-EMCS cross-linker coupling efficiency on aminosilane films by high-resolution X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) measurements. We then characterize DNA immobilization and hybridization on these films by (32)P-radiometry. We find that the silane film structure controls the efficiency of the subsequent steps toward DNA hybridization. A self-limited silane monolayer produced from 3-aminopropyldimethylethoxysilane (APDMES) provides a silane surface density of ~3 nm(-2). Thin (1 h deposition) and thick (19 h deposition) multilayer films are generated from 3-aminopropyltriethoxysilane (APTES), resulting in surfaces with increased roughness compared to the APDMES monolayer. Increased silane surface density is estimated for the 19 h APTES film, due to a ∼32% increase in surface area compared to the APDMES monolayer. High cross-linker coupling efficiencies are measured for all three silane films. DNA immobilization densities are similar for the APDMES monolayer and 1 h APTES. However, the DNA immobilization density is double for the 19 h APTES, suggesting that increased surface area allows for a higher probe attachment. The APDMES monolayer has the lowest DNA target density and hybridization efficiency. This is attributed to the steric hindrance as the random packing limit is approached for DNA double helices (dsDNA, diameter ≥ 2 nm) on a plane. The heterogeneity and roughness of the APTES films reduce this steric hindrance and allow for tighter packing of DNA double helices, resulting in higher hybridization densities and efficiencies. The low steric hindrance of the thin, one to two layer APTES film provides the highest hybridization efficiency of nearly 88%, with 0.21 dsDNA/nm(2). The XPS data also reveal water on the cross-linker-treated surface that is implicated in device aging.

| www.nrel.gov Grover, S.; Li, J.V.; Young, D.L.; Stradins, P.; Branz, H.M. (2013). " Reformulation of Solar Cell Physics to Facilitate Experimental Separation of Recombination Pathways. " Applied Physics Letters (103: 9); pp. 093502-093502-5. Achievement NREL developed a characterization approach to analyze recombination occurring via different channels in a solar cell. Key Result NREL researchers obtained an equation for open-circuit voltage that depends on light intensity, temperature, and strength of recombination in different regions of a solar cell. Potential Impact Applying the new formula allows accurate modeling of changes in performance due to defect parameters, light intensity, and temperature. Heterojunction band-diagram for amorphous/crystalline silicon (a-Si/c-Si) solar cell. The labeled regions of potential recombination are the front and rear surfaces, interface, space-charge region, and quasi-neutral region.

Abstract

Surface passivation of semiconductor nanocrystals (NCs) is critical in enabling their utilization in novel optoelectronic devices, solar cells, and biological and chemical sensors. Compared to the extensively used liquid-phase NC synthesis and passivation techniques, gas-phase routes provide the unique opportunity for in situ passivation of semiconductor NCs. Herein, we present a method for in situ gas-phase organic functionalization of plasma-synthesized, H-terminated silicon (Si) NCs. Using real-time in situ attenuated total reflection Fourier transform IR spectroscopy, we have studied the surface reactions during hydrosilylation of Si NCs at 160 °C. First, we show that, during gas-phase hydrosilylation of Si NCs using styrene (1-alkene) and acetylene (alkyne), the reaction pathways of the alkenes and alkynes chemisorbing onto surface SiH(x) (x = 1-3) species are different. Second, utilizing this difference in reactivity, we demonstrate a novel pathway to enhance the surface ligand passivation of Si NCs via in situ gas-phase hydrosilylation using the combination of a short-chain alkyne (acetylene) and a long-chain 1-alkene (styrene). The quality of surface passivation is further validated through IR and photoluminescence measurements of Si NCs exposed to air.