A commercial retarding field analyzer is used to measure the time-averaged ion energy distributions of impacting ions at the powered electrode in a 13.56 MHz driven, capacitively coupled, parallel plate discharge operated at low pressure. The study is carried out in argon discharges at 10 mTorr where the sheaths are assumed to be collisionless. The analyzer is mounted flush with the powered electrode surface where the impacting ion and electron energy distributions are measured for a range of discharge powers. A circuit model of the discharge, in combination with analytical solutions for the ion energy distribution in radio-frequency sheaths, is used to calculate other important plasma parameters from the measured energy distributions. Radio-frequency compensated Langmuir probe measurements provide a comparison with the retarding field analyzer data. The time-resolved capability of the retarding field analyzer is also demonstrated in a separate pulsed dc magnetron reactor. The analyzer is mounted on the floating substrate holder and ion energy distributions of the impinging ions on a growing film, with 100 ns time resolution, are measured through a pulse period of applied magnetron power, which are crucial for the control of the microstructure and properties of the deposited films.
A compact retarding field analyzer with embedded quartz crystal microbalance has been developed to measure deposition rate, ionized flux fraction, and ion energy distribution arriving at the substrate location. The sensor can be placed on grounded, electrically floating, or radio frequency (rf) biased electrodes. A calibration method is presented to compensate for temperature effects in the quartz crystal. The metal deposition rate, metal ionization fraction, and energy distribution of the ions arriving at the substrate location are investigated in an asymmetric bipolar pulsed dc magnetron sputtering reactor under grounded, floating, and rf biased conditions. The diagnostic presented in this research work does not suffer from complications caused by water cooling arrangements to maintain constant temperature and is an attractive technique for characterizing a thin film deposition system.
A new technique is presented to measure the angular distribution of plasma ions bombarding the substrate surface with a planar retarding field analyzer. By varying the effective aspect ratio of the analyzer's aperture, ions with different angular spread that are allowed through the device for detection are controlled. The analytical theory developed to define the ion current as a function of incident ion angle, ion energy, aperture geometry, and aspect ratio is shown. The method used to vary the effective aspect ratio of the aperture is also discussed. The mathematical theory is derived and the numerical solution discussed. Ion energy distributions, as a function of ion angle, with resolution as low as 3° can be measured.
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