Both WS2 and SnS are 2-dimensional, van der Waals semiconductors, but with different crystal structures. Heteroepitaxy of these materials was investigated by growing 3 alternating layers of each of these materials using atomic layer deposition on 5 cm × 5 cm substrates. Initially, WS2 and SnS films were grown and characterized separately. Back-gated transistors of WS2 displayed n-type behavior with an effective mobility of 12 cm(2) V(-1) s(-1), whereas SnS transistors showed a p-type conductivity with a hole mobility of 818 cm(2) V(-1) s(-1). All mobility measurements were performed at room temperature. As expected, the heterostructure displayed an ambipolar behavior with a slightly higher electron mobility than that of WS2 transistors, but with a significantly reduced hole mobility. The reason for this drop can be explained with transmission electron micrographs that show the striation direction of the SnS layers is perpendicular to that of the WS2 with a 15 degree twist, hence the holes have to pass through van der Waals layers that results in drop of their mobility.
Single crystals of REE, Al borates, new and known representatives of huntite family are obtained by annealing of REEBO 3 on Al 2 O 3 surface at 1100°С. Phase identification for REE=Pr, Eu, Tb, Tm, Ho, Yb has been carried out using unit cell parameter determination on single crystals. Crystal structures of C2/c (PrAl 3 (BO 3 ) 4 ) and C2 (EuAl 3 (BO 3 ) 4 ) -two polytypic modifications, previously determined for other REE's have been studied. Formation of one or another polytype in similar thermodynamic conditions is probably dependent on electronic structure of rare earth ion. Crystal field stabilization energy in crystal fields of different symmetry is a possible factor of polytype stability
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