Copper-doped semiconductors are classic phosphor materials that have been used in a variety of applications for many decades. Colloidal copper-doped semiconductor nanocrystals have recently attracted a great deal of interest because they combine the solution processability and spectral tunability of colloidal nanocrystals with the unique photoluminescence properties of copper-doped semiconductor phosphors. Although ternary and quaternary semiconductors containing copper, such as CuInS2 and Cu2ZnSnS4, have been studied primarily in the context of their photovoltaic applications, when synthesized as colloidal nanocrystals, these materials have photoluminescence properties that are remarkably similar to those of copper-doped semiconductor nanocrystals. This review focuses on the luminescent properties of colloidal copper-doped, copperbased, and related copper-containing semiconductor nanocrystals. Fundamental investigations into the luminescence of copper-containing colloidal nanocrystals are reviewed in the context of the well-established luminescence mechanisms of bulk copper-doped semiconductors and copper(I) molecular coordination complexes. The use of colloidal copper-containing nanocrystals in applications that take advantage of their luminescent properties, such as bio-imaging, solid-state lighting, and luminescent solar concentrators, is also discussed. a Measured at 20 K b Measured in a PV device 2. Synthesis and Structural Characterization of Colloidal Copper-Containing Nanocrystals Progress in the synthesis of luminescent copper-doped colloidal semiconductor NCs mirrors that in the synthesis of colloidal semiconductor NCs in general. The earliest reports from the mid-1980s through the 1990s describe the synthesis of copper-doped CdS and ZnS colloidal NCs by simply adding small amounts of copper salts to the aqueous-phase arrested precipitation reactions

Single-particle photoluminescence blinking is observed in the copper-centered deep-trap luminescence of copper-doped CdSe (Cu(+):CdSe) nanocrystals. Blinking dynamics for Cu(+):CdSe and undoped CdSe nanocrystals are analyzed to identify the effect of Cu(+), which selectively traps photogenerated holes. Analysis of the blinking data reveals that the Cu(+):CdSe and CdSe nanocrystal "off"-state dynamics are statistically identical, but the Cu(+):CdSe nanocrystal "on" state is shorter lived. Additionally, a new and pronounced temperature-dependent delayed luminescence is observed in the Cu(+):CdSe nanocrystals that persists long beyond the radiative lifetime of the luminescent excited state. This delayed luminescence is analogous to the well-known donor-acceptor pair luminescence of bulk copper-doped phosphors and is interpreted as revealing metastable charge-separated excited states formed by reversible electron trapping at the nanocrystal surfaces. A mechanistic link between this delayed luminescence and the luminescence blinking is proposed. Collectively, these data suggest that electron (rather than hole) trapping/detrapping is responsible for photoluminescence intermittency in these nanocrystals.

Single-nanocrystal and ensemble photoluminescence measurements on CuInS2 semiconductor nanocrystals reveal intrinsically broad luminescence bandshapes attributable to strong electron-phonon coupling in the emissive excited state, similar to the single-nanocrystal luminescence spectra of Cu +-doped CdSe nanocrystals. This finding is consistent with the hypothesis of exciton self-trapping in CuInS2 NCs, which forms an emissive state similar to those of Cu +-doped nanocrystals. Blinking is observed that resembles that of other semiconductor nanocrystals. Ensemble luminescence measurements reveal the existence of a remarkably long-lived excited state in these nanocrystals that continues to emit photons over several orders of magnitude in time following the excitation pulse. This delayed luminescence is attributed to reversible electron trapping. The delayed luminescence overlaps in time and shows similar distributed kinetics to the blinking "off" times, supporting the proposal that these two phenomena arise from the same microscopic carrier-trapping and-detrapping processes. Excitation power dependence measurements illustrate that the delayed luminescence saturates at very low intensities at the power densities used in single-nanocrystal measurements, consistent with this metastable charge-trapped state being the "off" state of the luminescence blinking cycle.

The photoluminescence intermittency (PI) exhibited by single emitters has been studied for over a decade. To date, the vast majority of PI analyses involve parsing the data into emissive and non-emissive events, constructing histograms of event durations, and fitting these histograms to either exponential or power law probability distributions functions (PDFs). Here, a new method for analyzing PI data is presented where the data are used directly to construct a cumulative distribution function (CDF), and maximum-likelihood estimation techniques are used to determine the best fit of a model PDF to the CDF. Statistical tests are then employed to quantitatively evaluate the hypothesis that the CDF (data) is represented by the model PDF. The analysis method is outlined and applied to PI exhibited by single CdSe∕CdS core-shell nanocrystals and the organic chromophore violamine R isolated in single crystals of potassium-acid phthalate. Contrary to previous studies, the analysis presented here demonstrates that the PI exhibited by these systems is not described by a power law. The analysis developed here is also used to quantify heterogeneity within PI data obtained from a collection of CdSe/CdS nanocrytals, and for the determination of statistically significant changes in PI accompanying perturbation of the emitter. In summary, the analysis methodology presented here provides a more statistically robust approach for analyzing PI data.

The photoluminescence decay dynamics of colloidal CdSe, Cu + :CdSe, and CuInS 2 nanocrystals have been examined as a function of temperature and magnetic field. All three materials show photoluminescence decay on timescales significantly longer than the intrinsic lifetimes of their luminescent excited states, i.e., delayed luminescence, involving formation of a metastable trapped excited state followed by detrapping to reform the emissive excited state. Surprisingly, the delayed luminescence decay kinetics are nearly identical for these three very different materials, suggesting they reflect universal properties of the delayed luminescence phenomenon in semiconductor nanocrystals. By measuring luminescence decay over 8 decades in time and 6 decades in intensity, we observe for the first time a clear deviation from power-law dynamics in delayed luminescence. Furthermore, for all three materials, the delayed luminescence decay dynamics are observed to be nearly independent of temperature between 20 K and room temperature, reflecting tunneling as the dominant mechanism for detrapping from the metastable state. A kinetic model is introduced that invokes a log-normal distribution of tunneling rates and reproduces the full range of delayed luminescence decay dynamics well.